Forming method of electric conduction structure

Abstract

A forming method of an electric conduction structure comprises providing a substrate, wherein the surface of the substrate is provided with a dielectric layer and the dielectric layer is provided with an opening; forming seed layers on surfaces of the lateral wall and the bottom of the opening; implanting modified ions into partial seed layer on the lateral wall surface which is close to the top of the opening through the iron implantation technology; utilizing the thermal annealing technology after the iron implantation technology to enable the partial seed layer with the modified irons being implanted to form into a sacrificial layer, wherein materials of the sacrificial layer and the seed layer are different; removing the sacrificial layer; forming an electric conducting layer in the opening after the sacrificial layer is removed, wherein the opening is full of the electric conducting layer. The formed electric conducting layer is free of gaps internally and good in quality.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a conductive structure. Background technique [0002] In the integrated circuit manufacturing process, conductive plugs are often used for electrical interconnection between devices. With the rapid development of integrated circuit manufacturing technology, the size of semiconductor devices is continuously reduced, and the process of forming conductive plugs is also challenged. [0003] The schematic diagram of the cross-sectional structure of the process of forming the conductive plug in the prior art is as follows: Figure 1 to Figure 4 shown. [0004] Please refer to figure 1 , the substrate 100 has a dielectric layer 101 on its surface, and the dielectric layer 101 has an opening 102 therein for forming a conductive plug. [0005] Please refer to figure 2 , depositing a barrier layer 105 and a seed layer 103 on the surface of the...

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Problems solved by technology

[0008] However, as the feature size of the device is continuously reduced, the width of the conductive plug is also reduced accordingly, and voids (Void) are easily generated in the formed conductive plug, and the quality of the formed conductive plug is poor, which is likely to affect the performance of the device.

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