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Bipolar thin film transistor and preparation method thereof

A thin film transistor and bipolar technology, applied in the field of bipolar thin film transistor and its preparation, can solve the problems of poor bipolarity of bipolar thin film transistors, achieve the effect of improving symmetry and solving poor symmetry

Active Publication Date: 2014-10-29
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Based on this, it is necessary to provide a bipolar thin film transistor and its preparation method for the problem of poor bipolarity of the bipolar thin film transistor based on the bottom gate structure prepared by the magnetron sputtering deposition method

Method used

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  • Bipolar thin film transistor and preparation method thereof
  • Bipolar thin film transistor and preparation method thereof
  • Bipolar thin film transistor and preparation method thereof

Examples

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preparation example Construction

[0062] see image 3 , as a specific embodiment of the bipolar thin film transistor preparation method, comprising the following steps:

[0063] In step S100, a gate electrode and a gate dielectric layer are sequentially prepared on the surface of the substrate from bottom to top.

[0064] In step S200, a magnetron sputtering deposition method is used to deposit an oxide channel layer on the surface of the gate dielectric layer.

[0065] In step S300, a source electrode and a drain electrode are prepared on the surface of the oxide channel layer.

[0066] Step S400, after depositing a capping layer on the surface of the oxide channel layer between the source electrode and the drain electrode, perform annealing treatment.

[0067] Among them, the negative charge in the capping layer is used to adjust the hole concentration in the oxide channel layer.

[0068] By adopting the preparation method of the bipolar thin film transistor provided by the present invention, after the ga...

Embodiment 1

[0081] A method for preparing a bipolar thin film transistor according to a specific embodiment of the present invention includes the following steps:

[0082] Step S110, select an n-type heavily doped thermally oxidized silicon wafer with a crystal orientation of 100, n + -Si / SiO 2 (100) is used as a substrate, and is cleaned and dried. Among them, an n-type heavily doped thermally oxidized silicon wafer is selected as the substrate. The n-type heavily doped thermally oxidized silicon wafer can be used as a substrate, a gate electrode and a gate dielectric layer at the same time, eliminating the need to prepare a gate electrode and a gate dielectric. layer steps, saving process time and process resources. In addition, by cleaning and drying the n-type heavily doped thermally oxidized silicon wafer, the cleanliness of the substrate is ensured, and the phenomenon of contaminating the oxide channel layer prepared subsequently is avoided.

[0083] Among them, the gate dielectr...

Embodiment 5

[0113] The preparation method of the bipolar thin film transistor of the present invention comprises the following steps:

[0114] Step S120, selecting an n-type heavily doped thermally oxidized silicon wafer with 100 crystal orientation, n + -Si / SiO 2 (100) is used as a substrate, and is cleaned and dried. This step is the same as step S110 in Embodiment 1.

[0115] Step S220, using the magnetron sputtering deposition method, at n + -Si / SiO 2 (100) A tin oxide film is deposited on the surface as an oxide channel layer. Wherein, when the magnetron sputtering equipment is used for sputtering deposition of the tin oxide thin film, the target material used is a metal tin target. The working gas is a mixed gas of argon and oxygen, and the content of oxygen is 11.8%. The sputtering power was 40W and the gas pressure was 0.24Pa. The deposition temperature was room temperature. The thickness of the final prepared stannous oxide film is 24 nm, and the length and width are 100 ...

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Abstract

The invention discloses a bipolar thin film transistor and a preparation method thereof. The bipolar thin film transistor comprises a substrate, a gate electrode, a gate dielectric layer, an oxide channel layer, a source electrode, a drainage electrode and a cover layer, wherein the gate electrode is positioned on the surface of the substrate, the gate dielectric layer is positioned on the surface of the gate electrode, the oxide channel layer is positioned on the surface of the gate dielectric layer, the source electrode and the drainage electrode are positioned on the surface of the oxide channel surface, and the cover layer is positioned on the surface of a position, between the source electrode and the drainage electrode, of the oxide channel layer. Negative charge in the cover layer is used for adjusting hole concentration in the oxide channel layer. The bipolar thin film transistor and the preparation method thereof have the advantages that by means of depositing the cover layer on the surface of the oxide channel layer, free holes in the oxide channel layer are captured by the negative charge in the cover layer, the purpose of adjusting the hole concentration of the oxide channel layer is realized, symmetry of the bipolar thin film transistor is improved, and the problem of poor symmetry of an existing bottom-gate-structured bipolar thin film transistor prepared by magnetron sputtering deposition is solved effectively.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a bipolar thin film transistor and a preparation method thereof. Background technique [0002] Transparent electronics is a rapidly developing field recently. Compared with traditional electronic devices, transparent electronic devices have greater advantages in many consumer-oriented application fields, especially in the field of display devices. Since oxide bipolar thin film transistors can be used to prepare CMOS (Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor) circuits, they can be used to prepare various integrated circuits and functional modules, making the entire circuit module transparent. These transparent circuits made with oxide bipolar thin film transistors can be used in optoelectronic devices, lenses, car windows, advertising, medical equipment and other fields. [0003] At present, most of the reported oxide bipolar thin f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L21/336
CPCH01L29/7869
Inventor 梁凌燕曹鸿涛罗浩刘权李秀霞邓福岭
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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