Organic electroluminescent device and preparation method thereof
An electroluminescent device and luminescence technology, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of total reflection loss, low light output, low luminous efficiency of devices, etc.
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[0054] Such as figure 2 The preparation method of the above-mentioned organic electroluminescence device shown, comprises the following steps:
[0055] S10 , performing surface pretreatment on the conductive anode substrate 10 .
[0056] The conductive anode substrate 10 can be indium tin oxide glass (ITO), aluminum zinc oxide glass (AZO) or indium zinc oxide glass (IZO). In a preferred embodiment, the conductive anode substrate 10 is indium tin oxide glass (ITO).
[0057] The thickness of the conductive layer of the anode conductive substrate 10 may be 80nm˜150nm.
[0058] The operation of surface pretreatment can be as follows: first carry out photolithographic treatment on the conductive anode substrate 10, cut it into the required size, and then use detergent, deionized water, acetone, ethanol and isopropanol to ultrasonically clean it for 15 minutes respectively to remove the conductive material. Organic pollutants on the surface of the anode substrate 10 .
[0059] ...
Embodiment 1
[0086] An organic electroluminescent device, comprising a conductive anode substrate, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, a metal sulfide doped layer, a phthalocyanine metal compound doped The mixed layer and metal sulfide layer, the specific structure is expressed as: ITO glass / WO 3 / NPB / Alq 3 / TAZ / LiF / ZnS:Ag (1:1) / CuPc:Ag (1.2:1) / ZnS. The preparation steps are:
[0087] Provide ITO glass with a conductive layer thickness of 100nm, and ultrasonically clean the ITO glass with detergent and deionized water for 15 minutes in order to remove organic pollutants on the glass surface.
[0088] The working pressure is 8×10 -5 Under the condition of Pa, the evaporation rate of organic materials is 0.2nm / s, and the evaporation rate of metals and metal compounds is 3nm / s. The hole injection layer, the hole transport layer, and the light emitting layer are sequentially evaporated on the ITO g...
Embodiment 2
[0092] An organic electroluminescent device, comprising a conductive anode substrate, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, a metal sulfide doped layer, a phthalocyanine metal compound doped Hybrid layer and metal sulfide layer, the specific structure is expressed as: AZO glass / MoO 3 / TCTA / ADN / TAZ / CsF / CdS:Al (0.5:1) / ZnPc:Pt (1:1) / MgS. The preparation steps are:
[0093] AZO glass with a conductive layer thickness of 80nm is provided, and the AZO glass is ultrasonically cleaned with detergent and deionized water for 15 minutes in order to remove organic pollutants on the glass surface.
[0094] The working pressure is 2×10 -3 Under the condition of Pa, the evaporation rate of organic materials is 0.1nm / s, and the evaporation rate of metals and metal compounds is 10nm / s, and the hole injection layer, the hole transport layer, and the light emitting layer are sequentially evaporated on t...
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