Industrialization device and method for preparation of nitride monocrystal material

Abstract

The invention discloses an industrialization device and a method for preparation of a nitride monocrystal material, and mainly comprises a set of device supplying a nitrogen gas source. A pressurization device is used for regulating the pressure intensity difference between two sides of a gas-liquid interface at an N2 terminal port to control the flow quantity and time of N2 entering a Ga-Na solution. With adopting of the design, the device can overcome the limitation of insufficient N2 source supply of a traditional device, has the advantages of adjustable N2 source total quantity, selectable N2 source input position, controllable N2 source supply time and the like, fully meets the N2 source required for growth of target GaN crystals, provides favorable conditions for increase of the target GaN crystal growth rate and simultaneous growth of the multi-sheet type GaN crystals, and greatly reduces the preparation cost.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic materials, in particular to an industrialized device and method for preparing high-quality nitride single crystal materials. Background technique [0002] As the main representative of the third-generation semiconductor materials, GaN has attracted widespread attention in the industry due to its excellent properties such as wide band gap, high withstand voltage, and high thermal conductivity. Among the many methods for preparing GaN single crystal materials, The Na Flux Method requires moderate preparation conditions (700-1000°C, 5MPa), and the prepared single crystal materials have a low dislocation density (~10 4 cm -2 ) and larger crystal size (4 inches), thus becoming the most promising preparation technology for growing GaN single crystal materials. The quality and growth rate of crystal growth in sodium flow method are directly related to the concentration and uniformity of N i...

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Problems solved by technology

N in conventional reactor 2 The source supply channel is single, and generally enters from the gas-liquid interface between the Ga-Na solution and nitrogen in the upper part of the reaction chamber, resulting in the N in the Ga-Na solution at the gas-liquid interface 2 The source concentration is large (compared to the middle and lower parts of the reaction chamber), which is easy to spontaneously nucleate and produce GaN polycrystals, which hinders N 2 The supply of sources leads to slow crystal growth. At present, the maximum growth rate of GaN single crystal material is only 30μm / h

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