High-precision automatic transistor test parameter acquisition system

An acquisition system and transistor technology, applied in thermometers, thermometers using electrical devices, and thermometers using directly heat-sensitive electric/magnetic components, can solve the problems of no R&D and production enterprises for transistor pressure and temperature automatic acquisition systems.

Inactive Publication Date: 2014-11-19
贵州凯里亿云电子科技有限责任公司
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the analysis and research on the temperature and pressure changes of transistors in China mainly adopts manual operation and ma

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-precision automatic transistor test parameter acquisition system
  • High-precision automatic transistor test parameter acquisition system
  • High-precision automatic transistor test parameter acquisition system

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0016] see Figure 1-5 , a high-precision automatic transistor temperature test and acquisition system, mainly used for temperature control of transistor thermal resistance test, mainly composed of servo motor force structure, test circuit, constant temperature heat sink, temperature and pressure sensor, information acquisition and comparison system 5 major Parts, the technical design scheme and implementation process of each part are described as follows:

[0017] 1) The force application structure of the servo motor

[0018] The force-applying structure of the servo motor adopts a screw-type transmission mechanism. The single-step motion stroke is controlled and set by PLC to achieve a high-precision depression stroke, and the size of the depression stroke is controlled according to the actual pressure demand. The contact surface between the pressure-applying structure and the product to be tested is polyimide (PI), a thermal insulating material. PI is one of the organic p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a high-precision automatic transistor test parameter acquisition system which can be used for not only automatically acquiring and analyzing the pressure and temperature change of a transistor, but also testing the electric property of the transistor. The high-precision automatic transistor test parameter acquisition system comprises a servo motor force applying mechanism, a testing circuit, a constant-temperature heat radiation table, a temperature and pressure sensor, an information acquisition and comparison system, wherein temperature testing system control program software and man-machine interface software are both developed independently, and the problem that an existing thermal resistance testing device cannot automatically test and acquire the pressure of a transistor and the temperature of a transistor shell; the testing temperature of the temperature sensor within small area can meet the requirement on precision of 0.1 DEG C, and the difficulty in testing the surface temperature of the transistor shell is solved; the automatic pressure applying system consists of a pressure sensor, a buffer, a stepping microspur unit and a heat insulation device, and can ensure that in a pressure applying process, not only can the appearance of the transistor not be damaged and the device heating not be affected by a mechanism, but also pressure can be increased slowly with the precision of 0.1%.

Description

technical field [0001] The invention belongs to the technical field of optical-mechanical-electrical integration, in particular to a high-precision automatic transistor temperature test and acquisition system. Background technique [0002] The reliability of the transistor is inherent in the product itself, and its reliability is closely related to whether the original design is reasonable and whether the process quality control is strict. However, due to the potential defects caused by various factors that are inevitable in the mass production process, such as: some changes in raw materials, equipment conditions and related process conditions, the transistors manufactured in this way, even with reasonable original design and good process Control, nor can it guarantee that the produced devices fully meet the requirements of the specification. Therefore, it is an indispensable and important process to improve the reliability of transistors by conducting sufficient reliabilit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01N25/20G01K7/18G05B19/05
Inventor 骆卫红袁强张麟陈新华胡东海刘俊
Owner 贵州凯里亿云电子科技有限责任公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap