Pseudo-differential structure non-volatile memory compatible with standard cmos process

Abstract

The invention discloses a non-volatile memory with a pseudo-differential structure compatible with standard CMOS technology, which solves the problem of incompatibility with standard CMOS technology, adopts a differential output structure, reduces the area of ​​the storage unit structure, and includes multiple storage units. Each storage unit includes a control transistor, a first tunneling transistor, a second tunneling transistor, a third tunneling transistor, a first conversion transistor, a second conversion transistor, a first selection transistor and a second selection transistor, a total of 8 transistors, All transistors are of single polysilicon gate structure and gate oxide layer of the same thickness, and the storage unit is compatible with standard CMOS technology; the invention reduces application cost, shortens technology development cycle, has good stability, relatively fast reading speed and high reliability .

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to the storage technology of semiconductor integrated circuits, more specifically, it is a pseudo-differential structure single-polysilicon non-volatile memory which is compatible with standard CMOS technology. Background technique [0002] Many integrated electronic devices require some amount of non-volatile memory. Usually non-volatile memory is used as an independent memory outside the chip or as a memory in the tag chip, mainly to store some control programs, processing instructions or items related to the chip for a long time without power supply. information and more. [0003] Several types of non-volatile memory commonly used at present mainly include erasable programmable read-only memory EPROM, electrically erasable programmable read-only memory EEPROM and flash memory Flash Memory. In addition, there are ferroelectric memory FeRAM, magnetic random access memory MR...

AI Technical Summary

Problems solved by technology

However, the application of the hot electron injection effect requires a relatively high current and consumes too much energy, and the FN tunneling effect will occupy a considerable area. These factors will affect the popularization and application of non-volatile memories.

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