Optically-driven IGBT (Insulated Gate Bipolar Translator) device based on single optical fiber power supply and pulse signal transmission

Abstract

The invention discloses an optically-driven IGBT (Insulated Gate Bipolar Translator) device based on single optical fiber power supply and pulse signal transmission. The optically-driven IGBT device comprises an optical signal generator for generating an optical signal, an optical controller for converting and controlling the optical signal, and an optical fiber medium for transmitting the optical signal, wherein the light emitting end of the optical signal generator is connected with the light receiving end of the optical controller through the optical fiber medium; and the signal output end of the optical controller is taken as a driving output end for driving an external conversion system. The on-off of an IGBT is controlled through the optical signal, and the form of a floating potential is adopted, so that a control signal is protected from being influenced by the emitter voltage of a controlled power device. The optically-driven IGBT device has the advantages of simple structure, high electric insulating performance, high interference resistance, convenience in controlling, easiness for high-power control, and the like. The optically-driven IGBT device is suitable for a high-power conversion system for use in traction drive of electric cars such as motor cars and high-speed rails as well as speed regulation of switching power supplies, electronic switches and various motors, and the like.

Description

technical field [0001] The invention belongs to the field of electronic power device control, and relates to a light-driven IGBT device, in particular to a light-driven IGBT device based on single optical fiber power supply and pulse signal transmission. Background technique [0002] The new power switching device IGBT is a composite fully-controlled voltage-driven power semiconductor device composed of bipolar transistors and insulated gate field effect transistors. Because it combines the performance of MOSFET and GTR, the existing power switch The device IGBT has the characteristics of high input impedance, fast switching speed, low conduction loss, high voltage resistance, and high current resistance, and is widely used in converter systems with 600V DC voltage and above, such as AC motors, frequency converters, switching power supplies, Lighting circuit, traction drive and other fields. [0003] Since the IGBT has the above-mentioned characteristics, the driving circu...

AI Technical Summary

Problems solved by technology

[0005] (1) The direct drive method is difficult to drive high-power IGBT;

[0006] (2) The isolation driving method has poor anti-interference ability and is difficult to control remotely;

[0007] (3) The circuit of the integrated module driving method is complicated and the cost is high

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