Silicon dioxide etching solution and preparation method thereof
A technology of silicon dioxide and etching solution, which is applied in the direction of chemical instruments and methods, surface etching compositions, etc., can solve the problems of low precision, slow etching speed, and failure to meet customer needs, and achieve fast speed and high etching precision. Effect
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[0010] The present invention is described below through examples, but not limited to the examples.
[0011] (1) Electric heating and rectification of electronic grade nitric acid, the temperature is controlled at 110℃±10℃;
[0012] (2) Pass the product obtained in step (1) through a white blowing reactor to remove nitrogen dioxide in the fraction with nitrogen to make it transparent and colorless;
[0013] (3) Put the product obtained in step (2) into a mixing tank, add an appropriate amount of ultrapure water, and stir for 30 minutes;
[0014] (4) Filter the product obtained in step (3) through a 0.2μm filter to remove harmful particles with a particle size greater than 0.2μm in the mixture to obtain this ultra-high purity nitric acid;
[0015] The above-mentioned preparation method of ultra-high purity nitric acid, wherein: the relative density of nitric acid in the step (1) is 1.40-1.42.
[0016] In the step (3), the concentration of nitric acid is controlled at 65±0.5%.
[0017] The p...
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