System for improving TSV etching process and etching endpoint monitoring method

Abstract

The invention discloses a system for improving TSV etching process and an etching endpoint monitoring method. A gas monitoring device is arranged outside a plasma reaction cavity, and the gas monitoring device is connected with a radio-frequency power source and an endpoint monitoring device, thereby realizing monitoring of the etching step and the depositing step of deep reaction plasma etching. The gas monitoring device determines the reaction gas on the surface of a substrate is an etching gas or a deposition gas by carrying out real-time monitoring on the spectrum emitted from the plasma on the surface of the substrate, and sends the results to the radio-frequency power source and the endpoint monitoring device so as to indicate the radio-frequency power source to output power matched with the gas, and meanwhile, to indicate the endpoint monitoring device to select some step to collect special-wavelength real-time light signal strength and establish a periodic real-time light signal strength spectral line, and the endpoint of the plasma processing process can be determined according to the light signal strength feature spectral line.

Description

Technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, in particular to a system for improving TSV etching process and an etching endpoint monitoring method. Background technique [0002] In recent years, with the development of semiconductor manufacturing processes, the requirements for integration and performance of components have become higher and higher. Plasma Technology is playing a pivotal role in the field of semiconductor manufacturing. Plasma technology is used in many semiconductor processes, such as deposition processes (such as chemical vapor deposition), etching processes (such as dry etching), and the like, by exciting the plasma formed by the process gas. For the plasma treatment process, its accuracy is directly related to the feature size of the component. With the shrinking of the feature size of semiconductor devices and the rapid increase in the number and complexity of the plasma treatment process steps ...

AI Technical Summary

Problems solved by technology

Since the Bosch process uses alternating and repeated isotropic etching and polymer deposition processes, and the plasma conditions (such as process gas type, pressure, RF power, etc.) used in the etching and deposition steps are different, it is necessary to Switch the RF power while switching the process gas; because it takes a certain amount of time for the process gas to be injected into the reaction chamber and reach the required pressure, the overlapping time between the process gas that meets the requirements and the matching RF power is short, and it is difficult to provide stable Etching and deposition protection of the substrate under plasma conditions

At the same time, applying conventional OES technology to the Bosch process with fast and periodic plasma disturbance characteristics will lead to periodic endpoint trajectories, which are prone to misjudgment of changes in plasma emission intensity, so it cannot accurately detect the endpoint

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