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Adhesive for semiconductor, fluxing agent, manufacturing method for semiconductor device, and semiconductor device

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, non-polymer adhesive additives, etc., can solve the problems of reduced connectivity/insulation reliability, loss of benefits, reduced connectivity, etc.

Inactive Publication Date: 2014-12-03
HITACHI CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If such impurities remain, the connection / insulation reliability between the semiconductor chip and the substrate or between two semiconductor chips will be reduced, and there is a possibility that the benefits of the above-mentioned connection method will be impaired.
[0006] In addition, as a method of suppressing the generation of these impurities, there is a method of covering the connection part with an anti-oxidation film known as OSP (Organic Solderability Preservatives) treatment, etc. Causes of decreased solder wettability and decreased connectivity during the process

Method used

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  • Adhesive for semiconductor, fluxing agent, manufacturing method for semiconductor device, and semiconductor device
  • Adhesive for semiconductor, fluxing agent, manufacturing method for semiconductor device, and semiconductor device
  • Adhesive for semiconductor, fluxing agent, manufacturing method for semiconductor device, and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0240] Add 3g of epoxy resin ("EP1032" 2.4g, "YL983" 0.45g, "YL7175" 0.15g), curing agent "2MAOK" 0.1g, 2,2-dimethylglutaric acid 0.11g (0.69mmol), Inorganic filler 1.9g (“SE2050” 0.38g, “SE2050-SEJ” 0.38g, “SM nano-silica” 1.14g), resin filler (EXL-2655) 0.25g and methyl ethyl ketone (solid content of 63% by mass amount), adding beads with a diameter of 0.8 mm and a diameter of 2.0 mm equal to the weight of the solid component, and stirred for 30 minutes with a bead mill (Fritsch Japan Co., Ltd., planetary pulverizer P-7). Thereafter, 1.7 g of a phenoxy resin (ZX1356) was added and stirred again with a bead mill for 30 minutes, and then the beads used for stirring were removed by filtration to obtain a resin varnish.

[0241] The obtained resin varnish was coated on a substrate film (manufactured by Teijin DuPont Film Co., Ltd., trade name "Purex A53") with a small precision coating device (Yaijing Seiki), and dried in a clean oven (manufactured by ESPEC) (70 °C / 10 minutes) ...

Embodiment 2

[0242] (Example 2, Comparative Examples 1-5)

[0243] The film adhesive of Example 2 and the film adhesive of Comparative Examples 1-5 were produced similarly to Example 1 except having changed the composition of the material used as shown in following Table 1.

[0244] The evaluation methods of the film adhesives obtained in Examples and Comparative Examples are shown below.

[0245]

[0246] Cut the film-like adhesive produced in the embodiment or comparative example into a prescribed size (8mm in length x 8mm in width x 0.045mm in thickness), and paste it on a glass epoxy substrate (glass epoxy substrate: 420 μm thick, Copper wiring: 9μm thick), a semiconductor chip with solder bumps (chip size: 7.3mm in length x 7.3mm in width x 0.15mm in thickness, bump height: about 40μm in copper pillar + solder, 328 bumps) Mounting was performed using a flip mounting device "FCB3" (trade name, manufactured by Panasonic) (mounting conditions: crimping head temperature: 350° C., crimp...

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Abstract

Provided is an adhesive for a semiconductor that contains an epoxy resin, a curing agent, and a fluxing agent that comprises a compound having either the group represented by formula (1-1) or formula (1-2). [In the formulas, R1 indicates an electron-donating group, and a plurality of R1 may be the same or different from one another.]

Description

technical field [0001] The present invention relates to an adhesive for semiconductors, a flux, a method for manufacturing a semiconductor device, and a semiconductor device. Background technique [0002] Conventionally, in order to connect a semiconductor chip to a substrate, a wire bonding method using thin metal wires such as gold wires has been widely used. On the other hand, in order to meet the requirements for higher functionality, higher integration, and higher speed of semiconductor devices, conductive protrusions called bumps are formed on semiconductor chips or substrates to directly bond semiconductor chips and substrates. The connected flip-chip connection method (FC connection method) is gradually promoted. [0003] For example, COB (Chip On Board) is widely used in BGA (Ball Grid Array) and CSP (Chip Size Package) for the connection between semiconductor chips and substrates. The connection method of the type also belongs to the FC connection method. In add...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09J163/00C09J7/00C09J11/06H01L21/60
CPCH01L2224/16227H01L2224/13139H01L24/29H05K3/3436H01L2224/05644H01L2224/05647H01L2224/13144H05K2201/0367C09J11/06H01L2224/05111H01L24/05H01L2224/29386H01L2224/81121H01L2224/81895H01L2224/1358H01L2224/13116H05K2201/10977H01L24/16H01L2224/81011H01L2224/73104H01L2224/27848H01L24/73H01L2224/13155H01L24/13H01L2224/11825H01L24/33H01L2224/05144H01L2224/17181H01L2224/92125H01L2224/13147H01L2224/2919H01L2224/05147H01L2224/27416H01L24/03H01L2224/131H01L2224/83191H01L2224/16148H01L2224/05655H01L25/50H01L2224/8121C09J7/00H01L2224/05116H01L2224/056H01L2224/13111H01L2224/83862H01L2224/05155H01L24/83H05K3/305H01L2224/2929H01L2224/05139H01L2224/27436H01L24/17H01L2224/32225H01L25/0657H01L24/92H01L2224/81191H01L2224/33181H01L2224/81907H01L2224/16225H01L2224/81815H01L2224/05611H01L24/11H01L2224/271H01L2924/10253H01L2224/03825H01L2224/05639H01L2224/32145H01L2225/06517H01L2224/93H01L2224/0558H01L24/93H01L2224/05616H01L2224/2939H01L2224/9205H01L2224/81203H01L2224/81193H01L2225/06541H01L2224/0401C09J163/00H01L24/27H01L2225/06513H01L24/32H01L2224/16238H01L24/81H01L2224/051H01L2224/831H01L24/94H01L2224/13025H01L2224/136H01L2224/13611H01L2224/13639H01L2224/13644H01L2224/13647H01L2224/13655H01L2224/16145H01L2224/29387H01L2224/83203H01L2224/94H01L2224/92122H01L2224/13575H01L2224/05575C08K5/092Y02P70/50H01L2924/0665H01L2924/00012H01L2924/014H01L2924/00014H01L2224/27H01L2924/01047H01L2924/01082H01L2924/01083H01L2924/01029H01L2224/11H01L2924/00H01L21/56H01L23/293H01L2224/8349
Inventor 本田一尊永井朗佐藤慎
Owner HITACHI CHEM CO LTD
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