Method for realizing photoresist microstructure

Abstract

The invention discloses a method for realizing a photoresist microstructure. The method comprises the following steps: preparing a netlike negative photoresist microstructure on the surface of a substrate; stripping the netlike negative photoresist microstructure from the substrate and spreading the netlike negative photoresist microstructure on a solid positive photoresist substrate, wherein the solid positive photoresist substrate is arranged on a conductive substrate; embedding the netlike negative photoresist microstructure into the surface layer of the solid positive photoresist substrate by a hot pressing method, and meanwhile adhering the solid positive photoresist substrate to the conductive substrate; and exposing and developing the solid positive photoresist substrate with the netlike negative photoresist microstructure embedded in the surface layer and being adhered to the conductive substrate on a prearranged mask to obtain the photoresist microstructure. By using the method, a layer of netlike negative photoresist microstructure is hot-pressed on the surface of the positive photoresist substrate, so that each easily inclined and collapsed part in the photoresist microstructure obtained after exposure and development of substrate is connected by the netlike negative photoresist microstructure on the surface to form a whole body, so that the inclination and the collapse of each part can be effectively prevented.

Description

technical field [0001] The invention relates to a method for realizing photoresist microstructure, especially for the photoresist microstructure with the characteristics of large aspect ratio and isolated microstructure array, and belongs to the technical field of microfabrication. Background technique [0002] Since the 1940s, semiconductor microelectronics technology and the resulting miniaturization technology have developed into the main pillar of the modern high-tech industry. In the past few decades, the development of micromachining technology has promoted the development of integrated circuits, and it has been possible to prepare hundreds of millions of transistors on a chip with the size of a square inch, and it is also possible to shrink the ordinary mechanical gear transmission system to a size that cannot be observed by the naked eye. . It is envisaged that micro-sensors, microprocessors, micro-actuators, etc. will be integrated in a very small geometric space t...

AI Technical Summary

Problems solved by technology

However, this method is only applicable to negative film like SU8, that is, the exposed area cannot be developed, but the non-exposed area can be developed.

Will not work at all when doing the same process with positive resist

The first exposure will expose all the photoresist at the junction of the glue structure, and the second exposure will not allow the exposed part to remain during development.

However, SU8 and other negative adhesives suitable for thick adhesive process are difficult to be dissolved by solvent after exposure, that is, the adhesive cannot be removed.

Although many methods have been developed internationally to remove SU8 glue, such as the use of oxygen ion etching, strong oxidizing acid etching, etc., it is difficult to popularize for specific applications.

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