Manufacturing method of light-emitting diode chip provided with omnidirectional reflector (ODR)

A technology of light-emitting diodes and corner mirrors, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of loss of manufacturers' costs, fragile epitaxial wafers, and scrapped epitaxial wafers, etc., to reduce the risk of rupture and save manufacturing costs. Effect

Active Publication Date: 2014-12-10
HC SEMITEK SUZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the problem that the epitaxial wafer is easily broken in the prior art, causing the epitaxial wafer to be directly scrapped and causing cost loss to the manufacturer, the embodiment of the present invention provides a method for preparing a light-emitting diode chip equipped with a full-angle reflector

Method used

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  • Manufacturing method of light-emitting diode chip provided with omnidirectional reflector (ODR)
  • Manufacturing method of light-emitting diode chip provided with omnidirectional reflector (ODR)
  • Manufacturing method of light-emitting diode chip provided with omnidirectional reflector (ODR)

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Embodiment

[0052] The embodiment of the present invention provides a method for preparing an LED chip with ODR, see figure 1 , the method includes:

[0053] Step 100: cleaning the sapphire substrate.

[0054] In this embodiment, the composition of the sapphire substrate includes alumina.

[0055] Specifically, this step 100 is a prior art, and will not be described in detail here.

[0056] Step 101: Form a pattern on a first region of a first surface of a sapphire substrate.

[0057]Understandably, the purpose of step 101 is to obtain a PSS (Patterned Sapphire Substrate, patterned sapphire substrate) to improve the light extraction efficiency of the LED chip. Among them, PSS is obtained by growing a mask for dry etching on a sapphire substrate, engraving the mask with a pattern using a standard photolithography process, and etching the sapphire by using ICP (plasma etching) technology.

[0058] In an implementation manner of this embodiment, step 101 may include:

[0059] Coating ph...

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Abstract

The invention discloses a manufacturing method of a light-emitting diode (LED) chip provided with an omnidirectional reflector (ODR), and belongs to the technical field of semiconductors. The method comprises the following steps: forming a pattern on the first region of the first surface of a sapphire substrate; growing an epitaxial layer on the second region of the first surface of the sapphire substrate and the pattern to obtain an epitaxial wafer; forming a scribing channel in the epitaxial layer, wherein the scribing channel extends from the first surface of the epitaxial wafer to the first surface of the sapphire substrate, and the scribing channel is positioned in the second region when the epitaxial wafer is overlooked from the first surface of the epitaxial wafer; manufacturing a current barrier layer, a current expansion layer and an electrode on the epitaxial wafer, and thinning the epitaxial wafer; evaporating the ODR on the second surface of the epitaxial wafer; performing laser scribing along the scribing channel from the first surface of the epitaxial wafer; performing splitting machining on the epitaxial wafer to obtain the LED chip. Through adoption of the method, the problems of easiness in breaking of the epitaxial wafer, direct scalding of the epitaxial wafer and bringing of cost loss to a manufacturer are solved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a light-emitting diode chip equipped with an omni-angle reflector. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor electronic component that can emit light. It has the characteristics of small size, high brightness and low energy consumption. It is widely used in the fields of display screens, backlight sources and lighting. [0003] ODR (Omni Directional Reflector, full-angle reflector) is mainly composed of metal, silicon dioxide, and titanium oxide. It can have high reflectivity for incident light in any direction. Usually, ODR is evaporated on the sapphire substrate of the LED epitaxial wafer. Above, increase the average reflection efficiency and improve the light extraction efficiency of the LED chip. [0004] In the process of realizing the present invention, the inventor finds that there are a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/46
CPCH01L33/005H01L33/0095H01L33/46H01L2933/0066
Inventor 周武胡根水
Owner HC SEMITEK SUZHOU
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