Beam membrane structure high-voltage electrostatic field sensor chip based on voltage-sensitive principle

Abstract

The invention relates to a beam membrane structure high-voltage electrostatic field sensor chip based on the voltage-sensitive principle. The beam membrane structure high-voltage electrostatic field sensor chip comprises a substrate, a silicon structure layer is arranged on the substrate, and an upper pole plate is arranged on the silicon structure layer. The upper surface of the substrate is connected with the lower surface of the silicon structure layer in an anodic bonding mode, the upper surface of the silicon structure layer is connected with the lower surface of the upper pole plate in an anodic bonding mode, the electrostatic field force is measured according to the piezoresistance principle, and the electrostatic field intensity is accordingly obtained. The beam and membrane combining mode is adopted, so that the measuring sensitivity is greatly improved; a mass block is not arranged on a central membrane of the chip, the thickness is small, a force bearing membrane is supported by four beams, the structural stiffness is improved, the frequency response of the sensor chip is high, connection is simple, resistor stripes and leads are easily distributed, the structure is stable, the manufacturing process is mature, the reliable packaging method is adopted, and therefore the chip can be suitable for various different environments. The chip is low in unit cost after volume production is achieved; in addition, connecting and installing are easily and conveniently achieved, and the chip is suitable for large-scale application in an industrial site.

Description

technical field [0001] The invention relates to the technical field of micro-electromechanical systems (MEMS) high-voltage electrostatic field sensors; in particular, it relates to a beam-membrane structure high-voltage electrostatic field sensor chip based on the principle of pressure sensitivity. Background technique [0002] High-voltage power capacitors are widely used in power systems and test stations. Because the charge stored in capacitors is in a static state, it is difficult to be sensed by general measurement methods, including electromagnetic induction, magnetic field measurement and other principles and methods. At present, it is used for high-voltage electrostatic induction The devices and products tested, including rotating vane type and vibrating capacitive electrostatic measuring devices, are technically and economically difficult to apply to high-voltage capacitors equipped in large quantities in the power sector due to their volume, large power consumption,...

AI Technical Summary

Problems solved by technology

However, in the electrostatic field, the electric field cannot provide continuous energy to the sensor, and the charge on the high-voltage conductor cannot continue to maintain macroscopic motion. This has become a difficult point in the measurement of the electrostatic field, making the current electric field sensor less sensitive to low-frequency or electrostatic fields.

At the same time, the current sensors that can be used to measure high-voltage electrostatic fields have disadvantages such as complex structure, large volume, and high cost, and cannot be mass-produced

During the operation of the power system or electrical laboratory, a large number of non-contact indirect measuring instruments are required to monitor the accident-prone points of the high-voltage busbar on-line to ensure the safety of operators and electronic equipment. Therefore, the existing electric field Sensors cannot meet this requirement

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