Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A Focus Detection Method Based on Grating Talbot Effect

A technology of taber and focus detection, applied in optics, optical components, optical devices, etc., can solve the problems of low anti-interference ability of the system, inability to take into account the accuracy and efficiency of focus inspection, and achieve high anti-interference ability and high engineering The effect of practicality and high focus detection accuracy

Inactive Publication Date: 2016-08-17
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Generally speaking, the currently reported focus detection methods have low system anti-interference ability; they cannot balance the accuracy and efficiency of focus detection

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Focus Detection Method Based on Grating Talbot Effect
  • A Focus Detection Method Based on Grating Talbot Effect
  • A Focus Detection Method Based on Grating Talbot Effect

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] In order to realize the on-line precision focus measurement of silicon wafers in the lithography system, this project is based on the Talbot effect of gratings. By analyzing the phase distribution of the interference fringes of the Talbot effect, the high-precision focus measurement of silicon wafers is completed. The focus detection system is as follows: figure 1 shown.

[0021] The focus detection method based on the grating Taber effect and applied to high-precision photolithography machines according to the present invention is characterized in that: the detection system is a 4f optical system consisting of a light source 1, a beam collimation and beam expansion system 2, and lens groups Lens_1 and Lens_2. system, tested silicon wafer 3, diffraction grating 4 and CCD detector 5. 4f optical system composed of lens groups Lens_1 and Lens_2: when the tested silicon wafer 3 is located on the confocal plane of the 4f system, the outgoing plane wavefront of the collimated...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a focusing method based on grating Taber effect, which is used to detect the position of a silicon wafer in a photolithography machine system in real time, and to complete high-precision leveling and focusing of the silicon wafer. The detection system uses the "self-imaging" phase change of the grating Taber effect caused by the defocusing of the silicon wafer to complete the high-precision focus detection of the silicon wafer of the lithography machine: when the silicon wafer is at the focal plane position, the imaging wavefront of the grating is a plane wavefront; When the film is out of focus, its imaging wavefront is a spherical wavefront. The detection system has simple structure, high anti-interference ability and good process adaptability.

Description

technical field [0001] The invention relates to a focusing method based on the grating Taber effect, which is used for high-precision leveling and focusing of silicon wafers of photolithography machines, and belongs to the field of microelectronic equipment and microprocessing. Background technique [0002] Microelectronics technology with large-scale integrated circuits as the core develops rapidly in accordance with the development law of "one-generation technology, one-generation equipment, and one-generation devices". With the emergence of nano-devices, new requirements are put forward for micro-fabrication and micro-nano detection technology. Optical projection lithography technology uses the principle of optical projection to transfer the high-resolution pattern on the reticle to the silicon wafer through the projection objective lens. Because the optical projection lithography technology can not only have the high resolution of contact lithography, but also avoid dama...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G03F9/00
CPCG03F9/7026G01B9/02097G02B7/28
Inventor 朱咸昌胡松赵立新
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com