Semiconductor interconnection structure and fabrication method thereof

Abstract

The application provides a semiconductor interconnection structure and a manufacturing method thereof. The manufacturing method includes: forming a first dielectric layer on the semiconductor device layer; forming a metal interconnection layer on the first dielectric layer, and performing chemical mechanical polishing on the metal interconnection layer; using boron and nitrogen organic compounds as raw materials, using plasma The chemical vapor deposition method forms a boron nitrogen film on the metal interconnection layer; forms a metal adhesion layer on the surface of the semiconductor device layer with a boron nitrogen film; forms a diffusion barrier layer on the metal adhesion layer; forms a second diffusion barrier layer on the diffusion barrier layer. Second medium layer. A boron nitrogen film is formed between the metal interconnection layer and the metal adhesion layer, and the ring structure formed by boron nitrogen in the boron nitrogen film reduces the contact between the boron nitrogen film and the metal interconnection layer as well as between the boron nitrogen film and the metal adhesion layer Stress, thereby increasing the mutual adhesion; the dielectric constant of the boron-nitride film is small, it will not enhance the parasitic capacitance between the first dielectric layer and the second dielectric layer, and improve the signal transmission of the semiconductor device with it rate.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular, to a semiconductor interconnection structure and a manufacturing method thereof. Background technique [0002] In recent years, with the high integration of semiconductor integrated circuits, the wiring interval has been shrinking, so that the parasitic capacitance between the wiring is increasing. In the most advanced semiconductor integrated circuits that must operate at high speed, in order to avoid signal delay, it is necessary to reduce The parasitic capacitance between wirings, at present, the method of reducing the relative dielectric constant of the insulating film between wirings is commonly used to reduce the parasitic capacitance between wirings. [0003] Taking a commonly used metal interconnection structure as an example, the metal interconnection structure includes a semiconductor substrate; a first intermetallic dielectric layer located on the surfac...

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Problems solved by technology

[0005] The purpose of this application is to provide a semiconductor interconnection structure and its manufacturing method to solve the problem of delamination and fracture at the interface between the metal interconnection layer and the metal adhesion layer in the prior art

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