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High-Voltage Cascode Diodes with High Electron Mobility Transistors and Monolithically Integrated Semiconductor Diodes

A diode and semiconductor technology, applied in the field of high-voltage diodes, can solve the problems of reducing the parasitic inductance and capacitance of cascaded circuits

Active Publication Date: 2017-06-09
INFINEON TECH AUSTRIA AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These connections in the package result in undesired parasitic inductance and capacitance that degrades the dynamic behavior of the entire cascode circuit

Method used

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  • High-Voltage Cascode Diodes with High Electron Mobility Transistors and Monolithically Integrated Semiconductor Diodes
  • High-Voltage Cascode Diodes with High Electron Mobility Transistors and Monolithically Integrated Semiconductor Diodes
  • High-Voltage Cascode Diodes with High Electron Mobility Transistors and Monolithically Integrated Semiconductor Diodes

Examples

Experimental program
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Embodiment Construction

[0019] figure 1 A schematic diagram of a cascaded diode 100 is shown. Such as figure 1 As indicated by the dashed box in , the cascode diode 100 includes a HEMT and a semiconductor diode (D) monolithically integrated with the HEMT on the same die. The cathode (C) of the semiconductor diode is connected to the source (S) of the HEMT and the anode (A) of the semiconductor diode is connected to the gate (G) of the HEMT. The anode of the semiconductor diode forms the anode (“anode”) of the cascode diode 100 and the drain (D) of the HEMT forms the cathode (“cathode”) of the cascode diode 100 . Such monolithically integrated configurations result in cascode diode 100 with the advantages of low threshold voltage of semiconductor diodes and the advantages of high current density and high breakdown voltage of HEMTs, while eliminating undesired Parasitic package inductance and capacitance.

[0020] In general, HEMTs can be implemented using any suitable Ill-nitride technology, such ...

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Abstract

The present invention provides one embodiment of a cascaded diode comprising a HEMT and a Si Schottky diode with a breakdown voltage in excess of 300V. A HEMT includes a gate, a drain, a source, and a two-dimensional electron gas channel region that connects the source and drain and is controlled by the gate. HEMTs have a breakdown voltage of over 300V. Si Schottky diodes are monolithically integrated with HEMTs. The Si Schottky diode includes a cathode connected to the source of the HEMT, and an anode connected to the gate of the HEMT. Si Schottky diodes have a breakdown voltage below 300V and a forward voltage below or equal to 0.4V. The anode of the Si Schottky diode forms the anode of the cascode diode and the drain of the HEMT forms the cathode of the cascode diode.

Description

technical field [0001] This application relates to high voltage diodes, and more particularly to high voltage diodes formed from low voltage silicon-based diodes cascaded on the same die as HEMTs. Background technique [0002] The highest performance Si power diodes are Si Schottky diodes. Si Schottky diodes have a low reverse recovery time and also have the lowest forward voltage drop (0.4V to 0.3V) compared to other types of Si power diodes. Although Si Schottky diodes have the advantage of low forward losses and negligible switching losses compared to other diode technologies, the narrow bandgap of silicon restricts their use at a maximum voltage of about 200V. Power diodes with breakdown voltages significantly higher than 200V have been realized by cascading low voltage Si Schottky diodes with high voltage AlGaN / GaN HEMTs (High Electron Mobility Transistors). These cascaded diodes have the advantages of low threshold voltage of Si Schottky diodes and the advantages of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/07H01L29/778
CPCH01L21/8258H01L29/4175H01L29/7786H01L27/0605H01L29/1075H01L29/1079H01L2224/48091H01L2224/48464H01L2224/73265H01L27/0629H01L29/2003H01L29/872H01L23/481H01L2924/00014H01L21/8234H01L29/1608H01L29/778
Inventor G·普雷科托C·奥斯特梅尔O·哈伯莱恩
Owner INFINEON TECH AUSTRIA AG