Photo Sensing Chip Having a Plurality of Photo Sensors and Manufacturing Method Thereof
A technology for a light sensor and a manufacturing method, which is applied to electric solid state devices, semiconductor devices, radiation control devices, etc., can solve problems such as increasing the complexity of the process, and achieve improved chip efficiency, reduced process complexity, and reduced light sensing. area effect
Inactive Publication Date: 2014-12-24
UPI SEMICON CORP
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like figure 1 As shown, since the tops of the red light sensor RS, the green light sensor GS and the blue light sensor BS are respectively coated with the required first filter RF, second filter GF and third filter Filter BF, thus greatly increasing the complexity of the entire process
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[0041] A preferred embodiment of the present invention is a photo-sensing chip with a plurality of photo-sensors. In practical applications, the light sensors of the light sensing chip may include red light (R) sensors, green light (G) sensors, blue light (B) sensors, ambient light (Ambient light ) sensors, proximity (Proximity) sensors, ultraviolet (UV) sensors or other types of light sensors, and the number of these light sensors can be adjusted according to actual needs, and is not intended to example is limited.
[0042] Please refer to figure 2 , figure 2 A schematic diagram illustrating a structure of a photo-sensing chip. Such as figure 2 As shown, the light sensing chip 2 includes a silicon substrate SUB, a first light sensor PD1 , a second light sensor PD2 and a third light sensor PD3 . In this embodiment, the first photosensor PD1 , the second photosensor PD2 and the third photosensor PD3 are formed side by side on the silicon substrate SUB. In particular, i...
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A photo sensing chip and a manufacturing method thereof are disclosed. The photo sensing chip includes a silicon substrate and a plurality of photo sensors formed on the silicon substrate. The photo sensors include a first photo sensor and a second photo sensor. The first photo sensor has a first P-N junction and a first depletion region is formed at first P-N junction for receiving a first light band of an incident light to generate a first photo current. The second photo sensor has a second P-N junction and a second depletion region is formed at second P-N junction for receiving a second light band of the incident light to generate a second photo current. A first process parameter corresponds to the first depletion region and a second process parameter corresponds to the second depletion region, wherein the first process parameter and the second process parameter are different.
Description
technical field [0001] The invention relates to light sensors, in particular to a light sensing chip with multiple light sensors and a manufacturing method thereof. Background technique [0002] Generally speaking, in order for the light sensor to only respond to light of a specific range of wavelengths, in addition to first using a standard silicon process to manufacture a P-N junction diode, it must be sent to a factory dedicated to the post-processing process. Coating a layer of photoresist made of a special material as a color filter to filter out light wavelength signals not used by the photosensor. [0003] Since the traditional light sensor needs to carry out the above-mentioned post-process processing in different factories, it will lead to increased production and transportation costs. For example: after the wafer with light sensor is fabricated in the fab, the wafer with light sensor needs to be transferred to other back-end process companies for photoresist coati...
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IPC IPC(8): H01L27/146
CPCH01L27/1461H01L27/14634H01L27/1464H01L27/14645H01L27/14647H01L27/14689
Inventor 林炳原
Owner UPI SEMICON CORP