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Three-dimensional graphics detection device and measurement method

A detection device and a three-dimensional graphics technology, applied in the direction of measuring devices, optical devices, instruments, etc., can solve the problems of low utilization rate of light energy, achieve the effects of saving equipment costs, simplifying the solution method, and improving the efficiency of light energy utilization

Active Publication Date: 2018-01-19
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The present invention provides a three-dimensional graphic detection device and measurement method to overcome the problems of the prior art that require a high-resolution spectrometer, low utilization rate of light energy, simulation modeling required for solution, and only one TSV can be detected at a time

Method used

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  • Three-dimensional graphics detection device and measurement method
  • Three-dimensional graphics detection device and measurement method
  • Three-dimensional graphics detection device and measurement method

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Experimental program
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Effect test

Embodiment 1

[0066] Please refer to figure 1 , the three-dimensional pattern detection device provided in this embodiment is used to detect the sample 170 to be tested, which includes:

[0067] an illumination projection module 110, configured to generate a detection beam and a reference beam, and project the detection beam onto the surface of the sample to be measured 170;

[0068] The reference imaging module 150 includes a reference plane 151, the reference imaging module 150 is used to collect the reference beam projected onto the reference plane 151 to generate a reference light intensity distribution signal;

[0069] The detection imaging module 140 is used to collect the reflected and diffracted light on the surface of the sample 170 to be measured to generate a detection light intensity distribution signal; and

[0070] The control processing module 160 is configured to perform an intensity correlation operation on the intensity distribution signal of the probe light and the inte...

Embodiment 2

[0103] The difference between this embodiment and Embodiment 1 is that the illumination light sources used in this embodiment are different, and the corresponding optical modulation components are also different.

[0104] Please refer to Figure 8 , in this embodiment, the illumination light source 210 uses multiple lasers 211 with different wavelengths, for example, the wavelengths are λ 1 , lambda 2 , lambda 3 lasers 211, and the laser beams generated by the multiple lasers 211 enter the optical modulation component 220 through a single-mode polarization-maintaining fiber 212 and a multiplexer 213. Further, the optical modulation component 220 includes a beam expander 221 , a rotating glass 222 , a polarizer 223 and a lens 224 sequentially arranged along the light propagation direction for beam shaping of the light emitted by the illumination source 210 . Preferably, the rotation of the rotating glass 222 is controlled by a motor 225 .

[0105] Specifically, the laser be...

Embodiment 3

[0110] The lighting projection module of this embodiment is the same as that of Embodiment 2, and the common difference between Embodiment 1 and Embodiment 2 is that the reference imaging module in this embodiment is a virtual module, therefore, there is no need to use a separate imaging module in this embodiment. Beamer, control processing module and embodiment 1 and 2 are also different.

[0111] Please refer to Figure 9 , in this embodiment, the illumination projection module also includes an illumination light source 310, an optical modulation assembly 320, a variable diaphragm 324, and a reflector 332 arranged in sequence along the light propagation direction, wherein the structure of the illumination light source 310 is the same as that of Embodiment 2, Both adopt a plurality of lasers 311 with different wavelengths as the light source of the three-dimensional pattern detection device, and the optical modulation component 320 includes a beam expander 321, a spatial ligh...

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Abstract

The invention discloses a three-dimensional pattern detection device and a measurement method. The device includes: an illumination projection module for generating a detection beam and a reference beam, and projecting the detection beam onto the surface of the sample to be measured; a reference imaging module including a A reference plane, the reference imaging module is used to collect the reference beam projected onto the reference plane to generate a reference light intensity distribution signal; a detection imaging module is used to collect reflected and diffracted light on the surface of the sample to be measured, to generate a detection light intensity distribution signal; and a control processing module for performing an intensity correlation operation on the detection light intensity distribution signal and a reference light intensity distribution signal to obtain surface topography parameters of the sample to be measured. The invention adopts the traditional imaging detection method to collect the zero-order reflected light and all-level diffracted light of the silicon wafer to be tested, without spatial filtering, and improves the efficiency of light energy utilization; realizes illumination of a large field of view, and the detection spot can cover multiple Surface topography, improve detection efficiency.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a three-dimensional pattern detection device and a measurement method. Background technique [0002] With the development of semiconductor manufacturing technology and the continuous improvement of chip integration, it has become increasingly difficult to further reduce the feature size of devices in order to satisfy Moore's law. To overcome the above difficulties, a vertical packaging technology based on through-silicon vias (TSV, throughSilicon Via) has been gradually developed, which can obtain semiconductor devices with higher integration. TSV is a 3D packaging technology that realizes the interconnection between chips by making vertical conduction between chips and chips, wafers and wafers. The density of chips stacked in three dimensions is higher, the integration per unit area is higher, and the performance of chip speed and low power consumption is greatly impr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01B11/24
Inventor 张鹏黎王帆
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD