Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Multilayer film improving extreme ultraviolet spectral purity and oxidation resistance

A spectral purification layer and anti-oxidation technology, applied in the field of multilayer films, can solve the problems of easy occurrence of oxide layer and carbon pollution deposition layer, pollution oxide layer, affecting the inhibition effect of spectral purification layer, etc., so as to improve the imaging quality and use Longevity, the effect of improving spectral purity

Inactive Publication Date: 2015-01-21
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
View PDF5 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Secondly, the generation of pollution and oxide layer
Due to the high energy in the EUV band, even if the multilayer film is used in an environment with a very small amount of water vapor and organic gas, the surface is extremely prone to oxide layers and carbon pollution deposits, which will lead to a significant decrease in the reflectivity of the multilayer film. Severely affects the suppression of the spectral purification layer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multilayer film improving extreme ultraviolet spectral purity and oxidation resistance
  • Multilayer film improving extreme ultraviolet spectral purity and oxidation resistance
  • Multilayer film improving extreme ultraviolet spectral purity and oxidation resistance

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Such as figure 1 As shown, the structure of the multilayer film 1 is composed of 40 cycles of Si layer 3 / Mo layer 4, spectral purification layer 5, Mo layer 4, spectral purification layer 5 and protective layer 6. The multilayer film 1 is disposed on the substrate 2, wherein the corresponding Si layer 3 and the corresponding Mo layer 4 constitute a period, and the period thickness is 7 nm. The thickness of each spectral purification layer 5 is 3 nm, and the material is C material. The thickness of the uppermost protective layer 6 is 2 nm, and the material is Ru. Because the existence of the spectral purification layer 5 will make the multilayer film 1 less reduce the reflectance at 13.5nm, its out-of-band band, especially 160nm ~ 240nm, will have an effective inhibitory effect on the reflectivity; Layer 6 effectively reduces the oxidation of the upper film. Applying the multilayer film 1 to the substrate 2 is preferably a magnetron sputtering technology, where the Si...

Embodiment 2

[0038] The structure of the multilayer film 1 is composed of 40 cycles of Si layer 3 / Mo layer 4, spectral purification layer 5, Mo layer 4, spectral purification layer 5 and protective layer 6. The multilayer film 1 is disposed on the substrate 2, wherein the corresponding Si layer 3 and the corresponding Mo layer 4 constitute a period, and the period thickness is 7 nm. The thickness of each spectral purification layer 5 is 5 nm, and the material is SiC. The thickness of the uppermost protective layer is 1nm, the material is TiO 2 . Because the existence of the spectral purification layer 5 will make the multilayer film 1 less reduce the reflectance at 13.5nm, its out-of-band band, especially 160nm ~ 240nm, will have an effective inhibitory effect on the reflectivity; Layer 6 effectively reduces the oxidation of the upper film. Applying the multilayer film 1 to the substrate 2 is preferably a magnetron sputtering technology, where the Si layer 3 and the Mo layer 4 are DC ma...

Embodiment 3

[0040] The structure of the multilayer film 1 is composed of 40 cycles of Si layer 3 / Mo layer 4, spectral purification layer 5, Mo layer 4, spectral purification layer 5 and protective layer 6. The multilayer film 1 is disposed on the substrate 2, wherein the corresponding Si layer 3 and the corresponding Mo layer 4 constitute a period, and the period thickness is 7 nm. The thickness of each spectral purification layer 5 is 4.2nm, and the material is Si 3 N 4 . The thickness of the uppermost protective layer is 3nm, the material is TiO 2 . Because the existence of the spectral purification layer 5 will make the multilayer film 1 less reduce the reflectance at 13.5nm, its out-of-band band, especially 160nm ~ 240nm, will have an effective inhibitory effect on the reflectivity; Layer 6 effectively reduces the oxidation of the upper film. Applying the multilayer film 1 to the substrate 2 is preferably a magnetron sputtering technology, where the Si layer 3 and the Mo layer 4 ar...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a multilayer film improving extreme ultraviolet spectral purity and oxidation resistance, and belongs to the field of extreme ultraviolet lithography. On the premise that the small reflectivity loss of the 13.5 nm position of the multilayer film is ensured, the reflectivity of an out-of-band wave band, oxidation of the multilayer film and surface layer carbon contamination sedimentation are effectively restrained. The multilayer film sequentially comprises a substrate, multiple layer periods of Si layers / Mo layers, a spectrum purification layer, a Mo layer, a spectrum purification layer and a protection layer. On the basis of not changing the appearance of a film system, not increasing the number of optical elements and not adding extra machining steps, the spectrum purification layer and the protection layer are manufactured; under the condition that the reflectivity loss can be omitted, the imaging quality and the photoetching quality of a photoetching system are improved by restraining the out-of-band wave band, the oxidation of reflection layers and the sedimentation of carbon-contaminated layers.

Description

Technical field [0001] The invention belongs to the field of extreme ultraviolet lithography, and specifically relates to a multilayer film with improved extreme ultraviolet spectral purity and oxidation resistance. Background technique [0002] Extreme ultraviolet lithography is the next generation lithography technology most likely to achieve the 22nm technology node. The extreme ultraviolet lithography system uses a wavelength of 13.5nm. In this waveband, most materials have high absorption coefficients, so only a total reflection system can be used. In order to further shorten the exposure time and increase the yield, it is necessary to plate a high-precision multilayer film on the optical element to increase the reflectivity. The multilayer film preferably plated in the extreme ultraviolet band is a Mo / Si multilayer film with a cycle number of 40 and a cycle thickness of 7 nm. Although the multilayer film has a high reflectivity at 13.5nm (up to 68%), its cut-off bandwidth...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G02B1/10
Inventor 匡尚奇王珣金春水
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com