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Si-based GaN LED structure and manufacturing method thereof

A technology of LED structure and manufacturing method, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as cumbersome process steps, and achieve the effect of improving luminous efficiency

Active Publication Date: 2015-01-21
华芯半导体科技有限公司
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

but requires additional processing steps
For LEDs with vertical structures, the process steps are more cumbersome

Method used

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  • Si-based GaN LED structure and manufacturing method thereof
  • Si-based GaN LED structure and manufacturing method thereof

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Embodiment Construction

[0020] Such as Figure 1-2 As shown, a GaN-based light-emitting diode LED structure on a silicon substrate, its epitaxial structure sequentially includes a Si substrate 1, a first high-temperature AlN2, a composition graded AlGaN or AlN / GaN superlattice 3, a second high-temperature AlN4, GaN non-doped layer 5, P-type contact layer 6, high-temperature P-type GaN layer 7, P-type electron blocking layer 8, multiple quantum well layer 9, N-type GaN layer 10; the first high-temperature AlN2, composition gradient AlGaN Or a sandwich structure buffer layer composed of AlN / GaN superlattice 3 and the second high temperature AlN4;

[0021] A method for preparing a gallium nitride-based light-emitting diode LED structure on a silicon substrate. The epitaxial structure generation sequence includes Si substrate 1, first high-temperature AlN2, composition graded AlGaN or AlN / GaN superlattice 3, second high-temperature AlN4, GaN non-doped layer 5, P-type contact layer 6, high-temperature P-...

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Abstract

Provided are a Si-based GaN LED structure and a manufacturing method thereof. The structure sequentially comprises a Si substrate, first high-temperature AlN, a component gradient AlGaN or AlN / GaN superlattice, second high-temperature AlN, a GaN non-doping layer, a P type contact layer, a high-temperature P type GaN layer, a P type electronic barrier layer, a multi-quantum well layer and an N type GaN layer. The first high-temperature AlN, the component gradient AlGaN or AlN / GaN superlattice and the second high-temperature AlN 4 constitute a sandwich structure buffer layer. According to the sandwich buffer layer structure, lattice mismatch and thermal mismatch between a structural material and the Si substrate are relieved in the mode that cracks are formed in interlayers; meanwhile, after the substrate is stripped, a diffuse reflection region of light rays is formed on the P type GaN layer, so that luminous efficiency of a GaN-based LED is effectively improved.

Description

technical field [0001] The present invention relates to the field of LED (Light Emitting Diode, light emitting diode) manufacturing, and more specifically relates to a Si (silicon) substrate gallium nitride GaN-based LED structure and a manufacturing method thereof. Background technique [0002] Since entering the 21st century, the emerging concept of energy saving and environmental protection has also begun to heat up in the LED (Light Emitting Diode, light emitting diode) industry. The white light LED technology based on GaN (gallium nitride)-based LEDs has also developed rapidly. The light source efficiency of white LED single light using GaN blue LED chip as excitation source has reached more than 130 lumens / watt, far exceeding the light efficiency of ordinary energy-saving lamps. LED technology has begun to fully enter the general lighting market. With the further expansion of the application range of GaN-based LEDs, the requirements for the luminous efficiency of LED ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/02H01L33/32H01L33/06H01L33/00
CPCH01L33/0075H01L33/02H01L33/06H01L33/32H01L2933/0008
Inventor 王智勇张杨杨翠柏杨光辉
Owner 华芯半导体科技有限公司