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Method for improving diffusion uniformity of crystalline silicon solar cell

A solar cell and uniformity technology, which is applied in the field of solar photovoltaics, can solve problems such as poor uniformity and compactness, and affect the uniformity of square resistance, and achieve the goal of improving the uniformity of phosphorus diffusion, good uniformity and compactness, and improving conversion efficiency Effect

Active Publication Date: 2015-01-28
上饶市弘业新能源有限公司
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Problems solved by technology

However, in the actual production process, it was found that due to the influence of parameters such as gas flow in the tube, temperature, and pressure in the diffusion furnace, the SiO formed in the pre-oxidation step in the diffusion process 2 The uniformity and compactness of the layer are poor, which directly affects the uniformity of square resistance

Method used

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  • Method for improving diffusion uniformity of crystalline silicon solar cell

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Embodiment

[0029] A method for improving the diffusion uniformity of a crystalline silicon solar cell, comprising the steps of:

[0030] 1) A P-type polysilicon wafer with a size of 156mm×156mm is subjected to conventional texturing.

[0031] 2) place the silicon chip after the texturing in the ozone atmosphere that photochemical ozone generator produces, make the texturing surface of silicon chip oxidize in ozone, the oxygen flow rate of photochemical ozone generator is 2-40L / min,, The purging time is 0.2-60min.

[0032] 3) Diffusion of silicon wafers oxidized in ozone, followed by conventional coating, front and back electrode printing, and sintering.

[0033] The diffusion step adopts the following diffusion process, and the diffusion equipment adopts the Dutch TEMPRESS diffusion furnace:

[0034] 1. Preparation stage: Big N 2 Flow 5slm, pressure 5pa

[0035] 2. Entering the boat stage: Big N 2 Flow 5slm, O 2 Flow 0sccm, small N 2 Flow 0sccm, pressure 5Pa;

[0036] 3. Out of t...

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Abstract

The invention discloses a method for improving the diffusion uniformity of a crystalline silicon solar cell. Silicon dioxide with thickness from 1 nm to 20 nm grows on a texturing surface of a silicon wafer after texturing through an actinic ozone generation device. The thickness of the silicon dioxide is greater than the thickness of silicon dioxide formed at a pre-oxidation step of the diffusion technology. The silicon dioxide is good in uniformity and compactness. In the subsequent diffusion process, the diffusion velocity of phosphorus in the silicon dioxide is less than the diffusion velocity of the phosphorus in silicon. An oxide-film achieves a buffering effect for reaction, thereby facilitating the uniform diffusion of phosphorus into the silicon wafer, enabling the diffusion uniformity of the phosphorus to be improved, and improving the conversion efficiency of the solar cell to some extent.

Description

technical field [0001] The invention relates to a method for improving the diffusion uniformity of a crystalline silicon solar cell, belonging to the technical field of solar photovoltaics. Background technique [0002] In recent years, the production technology of solar cells has been continuously improved, the production cost has been continuously reduced, and the conversion efficiency has been continuously improved, making the application of photovoltaic power generation increasingly popular and developing rapidly, and gradually becoming an important source of power supply. Solar cells can convert light energy into electrical energy under sunlight irradiation to realize photovoltaic power generation. [0003] The production process of solar cells is relatively complicated. Simply put, the production process of solar cells mainly includes: texturing, diffusion, etching, coating, printing and sintering. Diffusion to make PN junction is the core of crystalline silicon solar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L21/22H01L31/1804Y02E10/547Y02P70/50
Inventor 杨晓琴陈园张宇王鹏柳杉殷建安梅超张伟
Owner 上饶市弘业新能源有限公司
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