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Semiconductor starting device based on triode charging and manufacturing process of semiconductor starting device

A triode and semiconductor technology, applied in the field of integrated circuit start-up devices, can solve problems affecting power conversion efficiency, heat dissipation and reliability, the resistance of resistor R1 should not be too large, and the volume of switching power supply is large, so as to improve power supply efficiency and power consumption The effect of being small and occupying a small chip area

Inactive Publication Date: 2015-02-18
CHENGDU SMET TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The defect of the above-mentioned traditional switching power supply start-up circuit is: when the input voltage Vin range is wide, in order to ensure that the control IC can provide enough power at the lowest input voltage Starting current, so that the switching power supply can start normally, then the resistance value of resistor R1 should not be too large
Since the resistor R1 is always connected to the input terminal, the power consumption generated by the resistor R1 is P=(Vin-VCC)2 / R1. Obviously, if the switching power supply is working at a high voltage input, the power consumption on the resistor R1 will be very high. If it is large, it will affect the power conversion efficiency, heat dissipation and reliability, and reduce the power supply efficiency. Moreover, the resistor R1 must use a high-power resistor, so that the switching power supply is large in size and high in cost.

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  • Semiconductor starting device based on triode charging and manufacturing process of semiconductor starting device
  • Semiconductor starting device based on triode charging and manufacturing process of semiconductor starting device
  • Semiconductor starting device based on triode charging and manufacturing process of semiconductor starting device

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Embodiment Construction

[0021] The present invention will be further described below in conjunction with accompanying drawing:

[0022] Such as figure 2 as shown, figure 2 The power input terminal, power output terminal, resistor R1 and capacitor C1 are respectively connected with figure 1 Correspondingly, so adopted identical symbol; The semi-conductor start-up device based on triode charging of the present invention, the input voltage Vin of its power supply input is charged by electric capacity C1, and the two ends of electric capacity C1 are electric power output end, and its output voltage Vout is main A circuit (not shown in the figure) supplies power, an N-type lightly doped epitaxial layer 2 is arranged on the N-type high-concentration substrate 1, and half of the N-type lightly doped epitaxial layer 2 (ie figure 2 A P-type buried layer 3 is arranged in the right region of the center), a first N well 4 is arranged on the P-type buried layer 3, and a first P well 5 is respectively arrange...

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Abstract

The invention discloses a semiconductor starting device based on triode charging and a manufacturing process of the semiconductor starting device. The semiconductor starting device is characterized in that one end of a low-voltage power module is connected with one end of a resistor, the other end of the resistor is connected the base of an NPN triode and one end of an electronic switch, the anode input end of a feedback control module, the transmitter of the NPN triode and the first end of a capacitor are connected to serve as a power output end, the other end of the low-voltage power module is connected with the collector of the NPN triode to serve as a power input end, and the second end of the capacitor, the second end of the electronic switch and the cathode input end of the feedback control module are grounded. The invention further discloses a manufacturing process of the semiconductor starting device. The manufacturing process uses a BCD process to integrate the NPN triode. The semiconductor starting device has the advantages that the integrated NPN triode is used to directly charge the capacitor, high power efficiency, low loss and low heating value are achieved due to the fact that the NPN triode is low in resistance and low in power consumption when the triode is on, the circuit can be automatically disconnected after charging, and low energy consumption is achieved.

Description

technical field [0001] The invention relates to an integrated circuit starting device, in particular to a semiconductor starting device based on triode charging and a manufacturing process. Background technique [0002] The switching power supply starting circuit is a commonly used starting device in integrated circuits. At present, the structure (or basic principle) of most switching power supply starting circuits is as follows: figure 1 As shown, it includes resistor R1, capacitor C1, Zener diode ZD1, auxiliary winding N1, diode D1 and control IC. The current is greater than the starting current of the control IC. After the voltage of the capacitor C1 rises to the normal operating voltage of the control IC, the control IC starts to work. When the output voltage Vout of the starting circuit is stable, the voltage generated by the auxiliary winding N1 is rectified by the diode D1 and the capacitor C1 supplies power to the control IC after filtering, the VCC and output volta...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/06H02M1/36H01L21/822
Inventor 胡浩
Owner CHENGDU SMET TECH
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