Semiconductor starting device based on triode charging and manufacturing process of semiconductor starting device
A triode and semiconductor technology, applied in the field of integrated circuit start-up devices, can solve problems affecting power conversion efficiency, heat dissipation and reliability, the resistance of resistor R1 should not be too large, and the volume of switching power supply is large, so as to improve power supply efficiency and power consumption The effect of being small and occupying a small chip area
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[0021] The present invention will be further described below in conjunction with accompanying drawing:
[0022] Such as figure 2 as shown, figure 2 The power input terminal, power output terminal, resistor R1 and capacitor C1 are respectively connected with figure 1 Correspondingly, so adopted identical symbol; The semi-conductor start-up device based on triode charging of the present invention, the input voltage Vin of its power supply input is charged by electric capacity C1, and the two ends of electric capacity C1 are electric power output end, and its output voltage Vout is main A circuit (not shown in the figure) supplies power, an N-type lightly doped epitaxial layer 2 is arranged on the N-type high-concentration substrate 1, and half of the N-type lightly doped epitaxial layer 2 (ie figure 2 A P-type buried layer 3 is arranged in the right region of the center), a first N well 4 is arranged on the P-type buried layer 3, and a first P well 5 is respectively arrange...
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