A kind of crystalline silicon solar cell manufacturing process

Abstract

The invention discloses a crystalline solar cell production process. The process includes producing a semi-finished silicon wafer; removing an affected layer of the semi-finished silicon wafer; performing the surface texturing on the solar cell with the affected layer removed; subjecting the solar cell with the surface textured to diffusion treatment in an emitter region; performing edge knot etching on the solar cell with the diffusion treatment in the emitter region; subjecting the solar cell subjected to the edge knot etching treatment to PECDV (plasma enhanced chemical vapor deposition) SIN treatment; subjecting the solar cell subjected to the PECDV SIN treatment to silk-screen front-rear electrode slurry treatment; subjecting the solar cell subjected to the silk-screen front-rear electrode slurry treatment to co-firing so as to form metal contact; subjecting the solar cell with the metal contact to testing. In this way, surface doping concentration of the silicon wafer is reduced, dead layer thickness is decreased after diffusion, minority carrier lifetime is prolonged, PN junction depth is reduced, short-wave response of the solar cell is enhanced, and transfer efficiency of the solar cell is improved.

Description

technical field [0001] The invention relates to the field of solar cell design and research, in particular to a manufacturing process of a crystalline silicon solar cell. Background technique [0002] Polycrystalline silicon solar cell is a semiconductor electronic device that can effectively absorb solar radiation and convert it into electrical energy. It is widely used in various lighting and power generation systems. At present, in the field of P-type solar cell emitter production, the commonly used method is to decompose the POCL3 liquid source and oxygen at high temperature, and the P2O5 produced is deposited on the surface of the silicon wafer and reacts with Si to form simple P atoms and SiO2, P atoms It diffuses into the silicon wafer at high temperature, and forms a thin N-type layer on the surface of the silicon wafer. A PN junction is formed between the N-type layer and the P-type substrate silicon, which constitutes the emitter of the solar cell. [0003] In the...

AI Technical Summary

Problems solved by technology

[0008] The invention provides a crystalline silicon solar cell manufacturing process, which solves the technical problem that a layer of PSG layers with different thicknesses is easy to be generated in the crystalline silicon solar cell manufacturing process in the prior art, resulting in low conversion efficiency of the solar cell, and realizes The design of the manufacturing process of crystalline silicon solar cells is reasonable, which can reduce the doping concentration on the surface of the silicon wafer, reduce the thickness of the dead layer after diffusion, and improve the lifetime of the minority carrier. At the same time, it can reduce the junction depth of the PN junction, enhance the short-wave response of the solar cell, and improve the The technical effect of the conversion efficiency

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