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A kind of growth method of light-emitting diode and light-emitting diode

A technology of light-emitting diodes and growth methods, applied in the field of light-emitting diodes, can solve the problems of low luminous efficiency, difficulty and high risk of light-emitting diodes, achieve the effects of rapid and sufficient response, improve luminous efficiency, and reduce process difficulty and risks

Active Publication Date: 2017-06-27
HC SEMITEK SUZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problems of high process difficulty and high risk and low luminous efficiency of light-emitting diodes in the prior art, an embodiment of the present invention provides a method for growing a light-emitting diode and a light-emitting diode

Method used

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  • A kind of growth method of light-emitting diode and light-emitting diode
  • A kind of growth method of light-emitting diode and light-emitting diode

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Embodiment 1

[0033] An embodiment of the present invention provides a method for growing a light emitting diode, see figure 1 , the growth method includes:

[0034] Step 100: Perform pretreatment on the substrate.

[0035] Optionally, the substrate is sapphire.

[0036] Specifically, this step 100 may include:

[0037] Under the hydrogen atmosphere, the substrate was treated at high temperature for 5-6 minutes. Wherein, the temperature of the reaction chamber is 1000-1100° C., and the pressure of the reaction chamber is controlled at 200-500 torr.

[0038] Step 101: growing a low-temperature buffer layer, a high-temperature buffer layer, and an N-type layer on the substrate in sequence.

[0039] In this embodiment, a Veeco K465i MOCVD (Metal Organic Chemical Vapor Deposition, metal organic compound chemical vapor deposition) equipment is used to realize the LED growth method. Using high-purity H 2 (hydrogen) or high-purity N 2 (nitrogen) or high purity H 2 and high purity N 2 The ...

Embodiment 2

[0083] An embodiment of the present invention provides a light-emitting diode, which is obtained by using the method for growing a light-emitting diode provided in Embodiment 1, see figure 2 The light emitting diode comprises a substrate 1, and a low-temperature buffer layer 2, a high-temperature buffer layer 3, an N-type layer 4, a high-temperature active layer 5, a low-temperature active layer 6, and a P-type layer 7 stacked on the substrate 1 in sequence.

[0084] In this embodiment, the high-temperature active layer 5 is formed of alternately grown high-temperature InGaN well layers 51 and high-temperature GaN barrier layers 52 . The low-temperature active layer 6 is formed by several low-temperature active sub-layers 60, and each low-temperature active sub-layer 60 includes a low-temperature InGaN well layer 61, a low-temperature InGaN barrier layer 62, and an AlGaN barrier layer stacked in sequence. The growth temperature of the low-temperature InGaN well layer 61 is lo...

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Abstract

The invention belongs to the technical field of semiconductors and discloses a light emitting diode and a growth method thereof. The growth method includes: growing a low-temperature buffer layer, a high-temperature buffer layer, an N-type layer, a high-temperature active layer, low-temperature active sub-layers and a P-type layer on a substrate. Growing the low-temperature active sub-layers includes: growing a low-temperature InGaN trap layer, wherein the growth temperature of the low-temperature InGaN trap layer is lower than that of a high-temperature InGaN trap layer; opening an N source and an In source to form InN; closing the In source and opening a Ga source to form a GaN, and doping the formed InN into the GaN to form a low-temperature InGaN barrier layer; opening an Al source, and growing an AlGaN barrier layer on the low-temperature InGaN barrier layer, wherein the growth temperature of the low-temperature InGaN barrier layer and the AlGaN barrier layer is lower than that of a high-temperature GaN barrier layer. The light emitting diode and the growth method thereof have the advantages that technical difficulty and risks are lowered, and light emitting efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for growing a light emitting diode and the light emitting diode. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor electronic component that can emit light. As a high-efficiency, environmentally friendly, green new solid-state lighting source, LED has the advantages of low voltage, low power consumption, small size, light weight, long life, high reliability, etc., and is being rapidly and widely used, such as traffic lights, automobiles, etc. Interior and exterior lights, urban landscape lighting, mobile phone backlight, outdoor full-color display, etc. [0003] The existing LED growth method includes: sequentially growing a low-temperature buffer layer, a high-temperature buffer layer, an N-type layer, an active layer, and a P-type layer on a substrate. Wherein, the active layer is formed by alternately growing In...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/32H01L33/12H01L33/00
CPCH01L33/005H01L33/12H01L33/32H01L2933/0008
Inventor 姚振从颖韩杰胡加辉魏世祯
Owner HC SEMITEK SUZHOU