Flip-chip bonding electrode structure of surface-type semiconductor laser device

Abstract

The invention provides a flip-chip bonding electrode structure of a surface-type semiconductor laser device and belongs to the field of laser technology application. The flip-chip bonding electrode structure comprises a sapphire substrate, an epitaxial growth layer, an insulation layer, a P-type electrode, an N-type electrode, an N'-type electrode and a gold wire, wherein the N'-type electrode and the P-type electrode are equal in height and positioned on two sides of the N-type electrode respectively, and two ends of the gold wire are bonded on the N-type electrode and the N'-type electrode respectively. The flip-chip bonding electrode structure of the surface-type semiconductor laser device has the advantages that a traditional structure of the surface-type semiconductor laser device is changed, the height of the N-type electrode is increased to be as same as that of the P-type electrode through the gold wire, and accordingly, the problem of height difference between the P-type electrode and the N-type electrode of the sapphire laser device can be solved; in the same way, spacing between the P-type electrode and the N-type electrode can be increased properly, and bonding consumables of the P-type electrode and the N-type electrode can be isolated during bonding, so that short circuit possibly happening during bonding is prevented effectively.

Description

technical field [0001] The invention belongs to the technical field of semiconductor laser preparation and packaging, and in particular relates to a surface-type semiconductor laser device flip-chip welding electrode structure. Background technique [0002] With the maturity of semiconductor laser technology and the continuous expansion of application fields, the application range of semiconductor laser devices has covered many fields of optoelectronics, and has become the core technology of today's optoelectronic practical devices. Due to the advantages of small size, light weight and long life, semiconductor laser devices are widely used in military, industrial and civilian fields. Sapphire is known as one of the best laser media today, not only has good thermal conductivity and mechanical properties, high saturation flux, more importantly, its wavelength tuning range wider than 500nm is unmatched by any existing laser media of. Semiconductor laser devices based on sapph...

AI Technical Summary

Problems solved by technology

[0004] In order to solve the above-mentioned technical problems, the present invention provides a surface-type semiconductor laser device flip-chip welding electrode structure, which solves the problem of the height difference between the P-type electrode and the N-type electrode, and increases the gap between the P-type electrode and the N-type electrode at the same time. the distance

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