Flip-chip bonding electrode structure of surface-type semiconductor laser device
A laser device and electrode structure technology, which is applied in the direction of semiconductor lasers, semiconductor devices, laser components, etc., can solve the problems of increasing the distance between P-type electrodes and N-type electrodes, and the height difference between P-type electrodes and N-type electrodes. Effects of increased distance, prevention of short-circuit conditions, and simple packaging process
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[0024] Such as figure 1 As shown, the surface type semiconductor laser device flip-chip electrode structure of the present invention includes: a sapphire substrate (101), an epitaxial growth layer (102), an N'-type electrode (103), a P-type electrode (104), and an N-type electrode (105), gold wire (106) and insulating layer (107).
[0025] The sapphire substrate (101) used as a laser medium is a substrate for growing other structures, and the main component is alumina (Al 2 O 3 ); And the sapphire substrate (101) is a trigonal crystal system, with a refractive index of 1.76 to 1.77, which is a heterogeneous body, without cleavage, and is a development of cracks.
[0026] The epitaxial growth layer (102) is deposited and grown layer by layer on the sapphire substrate by a metal organic compound chemical vapor deposition method.
[0027] The N-type electrode (105) and P-type electrode (104) are used to etch the epitaxial growth layer by photolithography, and then use evaporation or spu...
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