Radiological volt isotope battery and preparation method thereof
A technology of isotope battery and radiant volt, which is applied in the field of micro-energy, to achieve the effects of reducing carrier transport recombination loss, convenient loading, and reducing energy loss
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Embodiment 1
[0027] Such as figure 1 Among them, the resistivity is chosen to be 0.002Ω·cm -1 N + Type silicon substrate layer 2 is used as the substrate, and N-type doped epitaxial growth is carried out by LPCVD to form a doping concentration of 1×10 16 cm -3 , an epitaxial N-type silicon layer 3 with a thickness of 6 μm; an Au Schottky barrier metal layer 4 is patterned and evaporated on the epitaxial layer after surface treatment on the epitaxial silicon wafer, with a thickness of 30 nm; patterned evaporation is deposited on the metal surface of the barrier layer Au upper electrode 6 with a thickness of 1 micron; a Ti layer with a thickness of 0.7 micron is patterned and evaporated on the metal surface of the barrier layer; a 1 micron thick Au, Ag or Al lower electrode metal layer is evaporated after surface treatment on the back of the base layer 1; Scribing; Ti layer chemisorption tritium loading radioactive source at high temperature.
Embodiment 2
[0029] Such as figure 1 Among them, the lower electrode metal layer 1 is Ti / Ni / Au with a thickness of 1 micron, N + Type silicon substrate layer 2 resistivity is 0.002Ω·cm -1 , the doping concentration of the epitaxial N-type silicon layer 3 is 8×10 15 cm -3 , the thickness is 20 μm, the Schottky barrier metal layer 4 is Au, the thickness is 30nm; the insulating passivation layer 5 is silicon dioxide, the thickness is 100nm, the upper electrode metal 6 is Au with a thickness of 1 μm, and the radioactive isotope layer 7 for electroplating 63 Ni.
Embodiment 3
[0031] Such as figure 1 , the lower electrode metal layer 1 is 1 micron thick Au, N + Type silicon substrate layer 2 resistivity is 0.002Ω·cm -1 , the doping concentration of the epitaxial N-type silicon layer 3 is 5×10 15 cm -3 , the thickness is 30 μm, the Schottky barrier metal layer 4 is a 50nm sputtered Pt metal layer, the insulating passivation layer 5 is silicon dioxide, the thickness is 100nm, the upper electrode metal 6 is Au with a thickness of 1 μm, and a radioactive isotope layer is loaded 7 for electroplating 147 Pm.
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