Thermocouple lifting device for indium phosphide single-crystal furnace

Abstract

The invention discloses a thermocouple lifting device for an indium phosphide single-crystal furnace and relates to the technical field of single-crystal furnaces. The lifting device comprises a fixed table, a position pointer, a ruler, a thermocouple tube, a sealing assembly, a lead screw, a lifting frame, a transmission assembly, a power source and a thermocouple wire. The lifting device is used for an indium phosphide single-crystal growth process based on a liquid encapsulation Czochralski method, the temperatures of different positions in a furnace chamber and a melt during the growth of an indium phosphide single-crystal can be monitored and measured, and the actual temperatures of the furnace chamber and the melt are obtained by online accurate measurement, so that the structures of a heater and a heat insulation system are improved, the power of the heater is regulated, a good thermal field is established, the temperature gradient in the melt is more reasonable, a high-quality indium phosphide crystal which is low in residual stress and low in dislocation density and has uniform electrical parameters is grown, and the measured temperature can be compared with the simulated temperature of related simulation software.

Description

technical field [0001] The invention relates to the technical field of single crystal furnaces, in particular to an indium phosphide single crystal furnace thermocouple lifting device. Background technique [0002] Indium phosphide material has excellent performance and broad application prospects. However, it is difficult to prepare high-quality indium phosphide single crystals. At present, the commonly used indium phosphide single crystal growth processes in the world mainly include the vertical gradient solidification method (VGF), the vertical Bridgman method (VB), the vapor pressure controlled Czochralski method (VCz) and the liquid seal Czochralski method ( LEC). Regardless of the indium phosphide single crystal growth process, the thermal field is a key factor for the quality of the grown single crystal. The result of thermal field adjustment directly affects the temperature gradient during the growth of indium phosphide crystals, thereby changing the thermal stres...

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Problems solved by technology

This problem greatly affects the thermal field of indium phosphide single crystal, so that thermal stress, dislocation density, defects, solid-liquid interface shape, etc. will be affected, and the quality of the grown single crystal is not high

In addition, the temperature of each position in the furnace cavity and the melt cannot be accurately known, and the results of the crystal simulation simulation cannot be compared and analyzed, which in turn affects the adjustment of the structure of the heater and the insulation system.

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