Heating body structure for rectangle sapphire single crystal

Abstract

The present invention provides a heating body structure for a rectangular sapphire single crystal. The heating body structure includes a pair of copper electrode connecting plates, longitudinal diameter-variable tungsten rods with different diameters, a transverse tungsten rod fixing structure, tungsten wires and molybdenum top wires, the pair of copper electrode connecting plates are combined into a rectangular shape, the tungsten wires are used for connection of the transverse and longitudinal diameter-variable tungsten rods, the molybdenum top wires are used to fix the longitudinal diameter-variable tungsten rods, the inner rings of the pair of copper electrode connecting plates are provided with through holes with diameter matched with the diameter of the tungsten rods, and rounding design is adopted at corners. The heating body structure aims at demands of the market for rectangular sapphire materials, is used for growth of the rectangular sapphire single crystal, and has the characteristics of stable thermal field, reasonable temperature gradient, and suitability for growing of the rectangular sapphire single crystal, and the like.

Description

technical field [0001] The invention relates to a heating body structure of a sapphire single crystal furnace, in particular to a heating body structure for growing a rectangular sapphire single crystal by a Kyropoulos method. Background technique [0002] Synthetic sapphire (Al 2 o 3 ), also known as corundum, is transparent and is an excellent material with a unique combination of physical, mechanical and chemical properties. High-quality sapphire material has the characteristics of high hardness, high temperature resistance, corrosion resistance, good light transmission, and excellent electrical insulation performance. And it is widely used in a series of high-tech fields such as the window of the laser, the epitaxial substrate of semiconductor silicon, the infrared light-transmitting material in the aerospace industry, and the epitaxial substrate material of semiconductor gallium nitride. [0003] As the demand for consumer electronics products (such as mobile phone s...

AI Technical Summary

Problems solved by technology

However, the current growth of rectangular sapphire single crystals is often due to a series of problems such as large stress at the four corners of the crystal, unreasonable temperature gradients in the furnace, and high difficulty in growing crystals, resulting in a significant decrease in the crystal yield. It can be seen that the rational design of the rectangular heating body structure is very important.

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