Epitaxial growth method for GaN-based LED epitaxial active area basic structure
A basic structure and epitaxial growth technology, which is applied in the field of epitaxial growth of the basic structure of the GaN-based LED epitaxial active region, can solve the problems of not being used by ordinary devices and high cost, and achieve the effect of smooth surface without defects and improved crystal quality
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[0021] According to the principles of the present invention, such as figure 2 As shown, the method for manufacturing a high-brightness GaN-based LED epitaxial layer mainly includes the following steps:
[0022] 1. PECVD deposits 200-300nm SiO on a 1.5-2.0μm thick GaN epitaxial layer 2 The deposition temperature is 250°C. Then in SiO 2 A layer of 8-15nm thick Ni film is vapor-deposited on the top, and Ni nano-islands are formed by rapid thermal annealing in a nitrogen atmosphere. The annealing temperature is 850°C and the time is 1-3min.
[0023] 2. Using Ni nano islands as a mask, use reactive ion etching (RIE) to etch SiO 2 Layer, the etching gas is CF 4 , The etching rate is controlled at 50-66nm / min, and the etching time is 3-6min. Continue to use inductively coupled plasma etching (ICP) to etch GaN, the etching gas is 5sccm Cl 2 And 50sccm Ar, the etching rate is 45-58nm / min, and the time is 25-45min.
[0024] 3. HNO at 100℃ 3 Soak in the solution for 5 minutes to remove the r...
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