Epitaxial growth method for GaN-based LED epitaxial active area basic structure

Abstract

The invention relates to an epitaxial growth method for a GaN-based LED (Light Emitting Diode) epitaxial active area basic structure, and aims at improving the current conditions of poor quality and low luminous efficacy of ordinary epitaxial growth crystals. The method comprises the following steps that: (1) a layer of SiO2 is deposited on a substrate covered with a GaN layer in a PECVD (Plasma Enhanced Chemical Vapor Deposition) way, then, a layer of Ni thin film is formed on the SiO2 through vapor deposition, and an Ni nano island is prepared through rapid thermal annealing; (2) the Ni nano island is used as a mask for etching the SiO2 and the GaN layer, the Ni thin film is removed after the etching completion, and GaN nano pillars with SiO2 pattern masks on the tops are obtained; and (3) the GaN transversely and epitaxially grows on the GaN nano pillars with the SiO2 pattern masks on the tops, and the GaN grows in the lateral direction on the side wall of each nano pillar to form a cavity; and crystal lattices of the SiO2 and the GaN are unmatched, so the GaN can transversely grow through crossing the SiO2 pattern masks, the SiO2 is finally covered, the GaN further grows 1 to 2[mu]m after the completion of the transverse epitaxial growth, and the active area basic structure is obtained. The epitaxial growth method provided by the invention has the advantages that the internal and external quantum effects can be simultaneously improved, so that the light efficiency of a GaN-based LED can be improved.

Description

technical field [0001] The invention belongs to the technical field of LED epitaxial layer growth, and mainly relates to an epitaxial growth method for the basic structure of a GaN-based LED epitaxial active region. Background technique [0002] GaN-based optoelectronic devices have a wide range of applications due to their wide bandgap width. Pure GaN substrate is currently the most suitable substrate material for epitaxial growth due to its good lattice matching with the epitaxial layer, but it is not used by ordinary devices due to its high cost; Al 2 o 3 It is the GaN-based LED substrate material commonly used at present, and the application of patterning technology has promoted the development of LED brightness. [0003] The current common growth epitaxial layer process is as follows: figure 1 As shown, a triangular pyramid PSS (patterned sapphire substrate) is first prepared, and a 2 μm GaN buffer layer is grown on the surface of the triangular pyramid PSS at 540 °C...

AI Technical Summary

Problems solved by technology

Pure GaN substrate is currently the most suitable substrate material for epitaxial growth due to its good lattice matching with the epitaxial layer, but it is not used by ordinary devices due to its high cost; Al 2 o 3 It is the GaN-based LED substrate material commonly used at present, and the application of patterning technology has promoted the development of LED brightness

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