Organic electroluminescence device and manufacturing method thereof
An electroluminescence device and luminescence technology, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of low light-emitting performance of devices, improve injection and transmission efficiency, improve injection capacity, and strengthen The effect of luminous efficiency
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Embodiment 1
[0051] A method for preparing an organic electroluminescent device, comprising the steps of:
[0052] (1) Provide optical glass with a refractive index of 1.8 and glass grade N-LASF44 as the substrate, rinse the glass substrate with distilled water and ethanol, and soak it in isopropanol for 12 hours;
[0053] (2) The anode is prepared on the surface of the glass substrate by magnetron sputtering; the material is indium tin oxide (ITO) with a thickness of 150nm; the acceleration voltage of magnetron sputtering is 700V, the magnetic field is 120G, and the power density is 25W / cm 2 ;
[0054] (3) Prepare a scattering layer on the surface of the anode; the scattering layer is sequentially composed of an organic material layer, a titanium dioxide layer and a doped layer; first, the organic material layer is prepared on the surface of the anode by thermal resistance evaporation; the material is 2,3, 5,6-tetrafluoro-7,7,8,8,-tetracyano-p-quinodimethane (F4-TCNQ), with a thickness ...
Embodiment 2
[0068] A method for preparing an organic electroluminescent device, comprising the steps of:
[0069] (1) Provide optical glass with glass grade N-LAF36 as the substrate, rinse the glass substrate with distilled water and ethanol, and soak it in isopropanol for 12 hours;
[0070] (2) The anode is prepared on the surface of the glass substrate by magnetron sputtering; the material is indium zinc oxide (IZO) with a thickness of 80nm; the acceleration voltage of magnetron sputtering is 300V, the magnetic field is 50G, and the power density is 40W / cm 2 ;
[0071] (3) Prepare a scattering layer on the surface of the anode; the scattering layer is sequentially composed of an organic material layer, a titanium dioxide layer and a doped layer; firstly, the organic material layer is prepared on the surface of the anode by thermal resistance evaporation; the material is 4, 4, 4-tris(naphthyl-1-phenyl-ammonium)triphenylamine (1T-NATA), the thickness is 30nm; the evaporation rate is 1nm...
Embodiment 3
[0082] A method for preparing an organic electroluminescent device, comprising the steps of:
[0083] (1) Provide optical glass with glass grade N-LASF31A as the substrate, rinse the glass substrate with distilled water and ethanol, and soak it in isopropanol for 12 hours;
[0084] (2) The anode is prepared on the surface of the glass substrate by magnetron sputtering; the material is aluminum zinc oxide (AZO) with a thickness of 300nm; the acceleration voltage of magnetron sputtering is 800V, the magnetic field is 200G, and the power density is 1W / cm 2 ;
[0085] (3) Prepare a scattering layer on the surface of the anode; the scattering layer is sequentially composed of an organic material layer, a titanium dioxide layer and a doped layer; first, an organic material layer is prepared on the surface of the anode by thermal resistance evaporation; the material is dinaphthyl- N,N'-diphenyl-4,4'-biphenylenediamine (2T-NATA), the thickness is 10nm; the evaporation rate is 0.1nm / ...
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