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A method for preparing photoelectric thin film

A technology of photoelectric film and photoelectric characteristics, applied in the direction of circuit, electrical components, final product manufacturing, etc., can solve the problems of high energy consumption, complicated operation, high temperature, etc., and achieve the effect of low energy consumption, simple method and convenient operation

Inactive Publication Date: 2018-02-16
HENAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

From the example of the preparation of silver sulfide photoelectric thin film, it can be seen that most of the existing photoelectric thin film preparation methods require higher temperature, and the operation is complicated and the energy consumption is high.

Method used

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  • A method for preparing photoelectric thin film
  • A method for preparing photoelectric thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] (1) The ITO (indium tin oxide) substrate (the substrate is rectangular, the specification is: 1.5×2cm) is ultrasonically cleaned with deionized water, absolute ethanol, and acetone, and then the ITO substrate is dried with nitrogen for use. ;

[0024] (2) Dissolve silver nitrate in deionized water and ethanol mixture to obtain 0.01mol / L silver nitrate deionized water ethanol solution; dissolve sodium sulfide in deionized water and ethanol mixture to obtain 0.05mol / L sodium sulfide deionization Water ethanol solution; wherein the volume ratio of ethanol and deionized water in the deionized water and ethanol mixture is 4:1;

[0025] (3) Put the ITO substrate on the homogenizer and rotate at high speed, and drop 2 drops of silver nitrate deionized water ethanol solution, 2 drops of deionized water and ethanol mixed solution, sodium sulfide deionized water ethanol on the high-speed rotating substrate in turn 2 drops of the solution, 2 drops of the mixed solution of deionized wa...

Embodiment 2

[0027] (1) The ITO (indium tin oxide) (the substrate is rectangular, the specification is: 1.5×2cm) is ultrasonically cleaned with deionized water, absolute ethanol, and acetone, and then the ITO substrate is dried with nitrogen for use;

[0028] (2) Dissolve lead nitrate in deionized water and ethanol mixture to obtain 0.01mol / L lead nitrate deionized water ethanol solution; dissolve sodium sulfide in deionized water and ethanol mixture to obtain 0.01mol / L sodium sulfide deionization Water ethanol solution; wherein the volume ratio of ethanol and deionized water in the deionized water and ethanol mixture is 4:1;

[0029] (3) Put the ITO substrate on the homogenizer and rotate at high speed, and drop 2 drops of lead nitrate deionized water ethanol solution, 2 drops of deionized water and ethanol mixed solution, sodium sulfide deionized water and ethanol on the high-speed rotating substrate. 2 drops of the solution, 2 drops of the mixed solution of deionized water and ethanol, this ...

Embodiment 3

[0031] (1) The FTO substrate (the substrate is rectangular, the specification is: 6×8cm) is ultrasonically cleaned with deionized water, absolute ethanol, and acetone, and then the FTO substrate is dried with nitrogen for use;

[0032] (2) Dissolve cadmium chloride in deionized water and ethanol mixture to obtain 0.01mol / L cadmium chloride and deionized water ethanol solution; dissolve sodium sulfide in deionized water and ethanol mixture to obtain 0.01mol / L sodium sulfide Deionized water ethanol solution; wherein the volume ratio of ethanol to deionized water in the deionized water ethanol mixture is 4:1;

[0033] (3) Put the FTO substrate on the homogenizer and rotate at high speed, and drop 3 drops of cadmium chloride deionized water ethanol solution, 2 drops of deionized water and ethanol mixed solution, and sodium sulfide deionized water on the high-speed rotating substrate. 3 drops of ethanol solution, 2 drops of a mixed solution of deionized water and ethanol, this is a depo...

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Abstract

The invention discloses a method for preparing a photoelectric film. The method includes the following steps that a substance A is dissolved in a solvent X, a solution AX is acquired, a substance B is dissolved in a solvent Y, a solution BY is acquired, the solution AX and the solution BY are added to a rotating substrate, a substance C is generated, and the photoelectric film is prepared, so that a sediment period is provided, and the proper sediment period can be selected according to the thickness of the required photoelectric film. The method is simple and convenient to operate, all operation is conducted under the condition that no heat source is added, energy consumption is low, environment friendliness is achieved, and the acquired photoelectric film is pure, dense, flat and suitable for industrial application.

Description

Technical field [0001] The invention belongs to the technical field of photoelectric film preparation, and specifically relates to a method for preparing a photoelectric film. Background technique [0002] When matter is exposed to light, it often triggers changes in certain electrical properties, also known as the photoelectric effect. The photoelectric effect mainly includes the photoconductive effect, the photovoltaic effect and the photoelectron emission effect. When a substance is irradiated by light, its electrical conductivity changes, which is called the photoconductive effect. If light shines on the p-n junction of the semiconductor, there will be a potential difference across the p-n junction. The p-zone is the positive electrode and the n-zone is the negative electrode. This potential difference can be measured with a high internal resistance voltmeter, which is called the photovoltaic effect. When a metal or semiconductor is illuminated by light, the electrons on it...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L31/18
CPCH01L21/02628H01L31/18H01L31/1828Y02P70/50
Inventor 黎春喜陈冲李福民翟勇
Owner HENAN UNIVERSITY