A method for chemical mechanical polishing of silicon carbide single wafer using synthetic resin tin plate

Abstract

The invention relates to a silicon carbide single crystal wafer chemico-mechanical polishing method utilizing a synthetic resin tin disc. The synthetic resin tin disc is adopted in chemico-mechanical polishing of a silicon carbide single crystal wafer, the width and depth of a carved groove of the synthetic resin tin disc are determined according to the thickness and polishing removing amount of the silicon carbide single crystal wafer, face finishing and groove carving machining are carried out on the synthetic resin tin disc through a belt face finishing grinding miller, a ceramic disc with the single crystal wafer is placed on the grooved synthetic resin tin disc, chemico-mechanical polishing is carried out through polishing solutions and a ceramic ring, pressure is controlled to be 30 kPa to 70 kPa, rotating speed is controlled to be 40 rpm to 80 rpm, and the flow of the polishing solutions is controlled to be 5 mL / min to 50 mL / min. Chemico-mechanical polishing is carried out on the grooved synthetic resin tin disc through the polishing solutions prepared by nano-crystalline diamond and alkaline silica solutions, the ceramic ring is used in cooperation, scratches and damage caused in the mechanical polishing process can be removed fast, machining time is greatly shortened, and machining efficiency is improved.

Description

technical field [0001] The invention relates to a single wafer polishing process, in particular to a silicon carbide single wafer chemical mechanical polishing method using a synthetic resin tin plate. Background technique [0002] As the third-generation wide-bandgap semiconductor material, single-crystal silicon carbide (SiC) has some superior properties, such as high electron saturation mobility and excellent thermal properties, and has great potential in manufacturing high-frequency and high-power devices with high temperature resistance and radiation resistance. Its application prospect has become the focus of international attention. In the manufacture and epitaxial growth of next-generation power devices, there are strict requirements on the final surface quality of SiC single crystal materials, because the surface quality parameters of SiC substrates will directly affect the performance of devices, so atomic level flatness can be obtained during processing However, ...

AI Technical Summary

Problems solved by technology

In the manufacture and epitaxial growth of next-generation power devices, there are strict requirements on the final surface quality of SiC single crystal materials, because the surface quality parameters of SiC substrates will directly affect the performance of devices, so atomic level flatness can be obtained during processing However, due to the high hardness of SiC crystal (Mohs hardness is 9.2, second only to the hardest diamond), the chemical stability is very good (almost no significant chemical reactions with other substances), this SiC substrate is difficult to process

Although it is possible to obtain an atomically flat, damage-free, and defect-free surface with the traditional chemical mechanical polishing process, the material removal rate is often very low, and the processing time is long and the cost is high