Device for detecting system wave aberration of photoetchingprojection objective

A lithographic projection and detection device technology, applied in the field of optical detection, can solve the problems of reduced measurement accuracy, the spatial resolution of the integrated interferometer unit cannot meet the measurement requirements, and it is difficult to eliminate coma, so as to achieve high detection accuracy and measurement Effects of improved accuracy and reduced noise

Inactive Publication Date: 2015-04-01
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

The disadvantage of this method is that it is difficult to eliminate the influence of coma aberration, especially for the immersion projection exposure optical system, the projection obje

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  • Device for detecting system wave aberration of photoetchingprojection objective
  • Device for detecting system wave aberration of photoetchingprojection objective
  • Device for detecting system wave aberration of photoetchingprojection objective

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Embodiment Construction

[0012] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0013] like figure 1 As shown, a wave aberration detection device for a lithographic projection objective lens system, the device includes: a light source 1 used to generate an illumination beam; an illumination system 2 for adjusting the light intensity distribution and illumination mode of the light source; a small hole spatial filter 3; A spectroscopic plate 4 coated with a semi-transparent and semi-reflective film; a projection objective lens 5 capable of imaging the mask pattern; a spherical mirror 6; a three-dimensional workbench 7 capable of carrying the spherical mirror and positioning it precisely; a two-dimensional grating 8; a spatial filter 9. Spatial filter micro-motion table 10 capable of carrying spatial filter and positioning accurately; collimating mirror 11; image sensor 12 for collecting interference fringes. The light emit...

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Abstract

A device for detecting system wave aberration of a photoetchingprojection objective comprises a light source, an illuminating system, a pinhole space filter, a beamsplitter, a to-be-detected projection objective, a spherical reflector, a two-dimensional grating, a space filter and an image sensor. According to the device, a level selection window is taken as the space filter, so that noise is reduced, the measuring accuracy is improved, and the defect of limitation of Talbot distance to the image sensor position is overcome. The spherical reflector is added to a light path, can be used for detection of system wave aberration of an immersedprojection objective and can also be used for detection of system wave aberration of a non-immersedprojection objective; full-field system wave aberration of the projection objective can be detected, and wave aberration represented by 36 Zernike coefficients is obtained; and with adoption of a light path structure of a shearing interferometer, the device has the advantages of high detecting accuracy, good repeatability and the like.

Description

technical field [0001] The invention belongs to the technical field of optical detection, in particular to a detection device for wave aberration of an immersion lithography projection objective lens system. Background technique [0002] Optical projection lithography is an optical exposure process that uses the principle of optical projection imaging to transfer the high-resolution IC pattern on the mask to the rubber-coated silicon wafer by exposure. It is the most widely used in the manufacturing process of VLSI The lithography technology with the widest and fastest technological progress. The lithography process directly determines the feature size of large-scale integrated circuits and is a key process in the manufacture of large-scale integrated circuits. The projection objective lens of a lithography machine is the core component of the lithography process and the most difficult subsystem. [0003] Immersion lithography technology replaces the air (mostly water) with...

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Application Information

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IPC IPC(8): G03F7/20G01M11/02
Inventor 于长淞苏东奇苗二龙隋永新杨怀江
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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