Sintered body and amorphous film

A sintered body and amorphous film technology, applied in the direction of ion implantation plating, coating, metal material coating process, etc., can solve the problems of inaccessibility, different composition systems, small refractive index, etc., and achieve the purpose of inhibiting film peeling, The effect of less membrane rupture

Active Publication Date: 2015-04-01
JX NIPPON MINING & METALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since it is a crystalline film, the effect of an amorphous film in the present invention described later cannot be obtained.
In addition, Patent Document 5 discloses an amorphous transparent conductive film with a small refractive index and low specific resistance, but unlike the composition system of the present invention, there is a problem that the refractive index and the resistance value cannot be adjusted at the same time.

Method used

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  • Sintered body and amorphous film

Examples

Experimental program
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Effect test

Embodiment 1）

[0044] Prepare ZnO powder equivalent to 3N of 5 μm or less and SnO equivalent to 3N with an average particle size of 5 μm or less 2 Powder, MgF equivalent to 3N with an average particle size of 5 μm or less 2 powder, Ga below 5 μm equivalent to 3N 2 o 3 pink. Then, ZnO powder, SnO 2 Powder, MgF 2 Powder and Ga 2 o 3 powder formulated into ZnO:SnO 2 : MgF 2 : Ga 2 o 3 =45.5: 30.4: 22.9: 1.25 mol% of the compounding ratio, after mixing it, at a temperature of 850°C and a pressure of 250kgf / cm 2 The powder material is hot-pressed and sintered under certain conditions to obtain a sintered body for ion plating. Ion plating was performed using this sintered body. As a result, it was confirmed that stable ion plating was possible and that the produced film was an amorphous film. In addition, the refractive index of this film reaches 1.87 (wavelength 550nm).

Embodiment 2）

[0046] Prepare ZnO powder equivalent to 3N of 5 μm or less and SnO equivalent to 3N with an average particle size of 5 μm or less 2 Powder, MgF equivalent to 3N with an average particle size of 5 μm or less 2 powder, Ga below 5 μm equivalent to 3N 2 o 3 pink. Then, ZnO powder, SnO 2 Powder, MgF 2 Powder and Ga 2 o 3 powder formulated into ZnO:SnO 2 : MgF 2 : Ga 2 o 3 = 68.21: 11.76: 18.24: 1.79 mol% of the compounding ratio, after mixing it, at a temperature of 850°C and a pressure of 250kgf / cm 2 The powder material is hot-pressed and sintered under certain conditions to obtain a sintered body for ion plating. Ion plating was performed using this sintered body. As a result, it was confirmed that stable ion plating was possible and that the produced film was an amorphous film. In addition, the refractive index of this film reaches 1.87 (wavelength 550nm).

Embodiment 3）

[0048] Prepare ZnO powder equivalent to 3N with an average particle size of 5 μm or less and In with an average particle size of 5 μm or less equivalent to 3N 2 o 3 Powder, MgF equivalent to 3N with an average particle size of 5 μm or less 2 powder, Ga below 5 μm equivalent to 3N 2 o 3 pink. Then, ZnO powder, In 2 o 3 Powder, MgF 2 Powder and Ga 2 o 3 powder formulated as ZnO:In 2 o 3 : MgF 2 : Ga 2 o 3 = 66.7: 21.3: 14.9: 8.3 mol% of the mixture, after mixing, at a temperature of 850 ° C, a pressure of 250 kgf / cm 2 The powder material is hot-pressed and sintered under certain conditions to obtain a sintered body for ion plating. Ion plating was performed using this sintered body. As a result, it was confirmed that stable ion plating was possible and that the produced film was an amorphous film. In addition, the refractive index of this film reaches 1.85 (wavelength 550nm).

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Abstract

This sintered body, which contains zinc (Zn), tin (Sn) and/or indium (In), magnesium (Mg), and oxygen (O), is an oxide sintered body characterized by having a total content of Sn and/or In in terms of SnO2 and/or In2O3 of 10-90 mol%, having an Mg content in terms of MgF2 of 15-50 mol% when the ratio of the number of Sn and/or In atoms to the number of Zn atoms is no greater than 1, and having an Mg content in terms of MgF2 of 1-40 mol% when the ratio of the number of Sn and/or In atoms to the number of Zn atoms is at least 1. The sintered body can form an amorphous film by means of a sputtering method or an ion plating method, and so has a superior effect in being able to suppress the occurrence of cracking or peeling of the film resulting from membrane stress. The thin film of the present invention is particularly useful as an optical thin film forming a protective layer for an optical information recording medium, an organic EL television thin film, and a transparent electrode thin film.

Description

technical field [0001] The present invention relates to a sintered body capable of obtaining a transparent conductive film with good visible light transmittance and conductivity, and an amorphous film with a low refractive index produced using the sintered body. Background technique [0002] Conventionally, an ITO (indium tin oxide) film, which is a transparent conductive film in which tin is added, is transparent and has excellent conductivity, and has been used in a wide range of applications such as various displays. However, since indium which is a main component is expensive in this ITO, there exists a problem that it is inferior in terms of manufacturing cost. [0003] Based on this, films using, for example, zinc oxide (ZnO) as a substitute for ITO have been proposed. Since the film is mainly composed of zinc oxide, it has an advantage of being inexpensive. Such a film is known to have increased conductivity due to oxygen deficiency of ZnO as the main component. If ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/453C04B35/00C04B35/457C23C14/24C23C14/34
CPCC23C14/3414C04B35/453C04B35/457C04B35/645C04B2235/3206C04B2235/3286C04B2235/3293C04B2235/3409C04B2235/445C04B2235/5436
Inventor 奈良淳史
Owner JX NIPPON MINING & METALS CO LTD
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