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A PECVD coating process for preparing component crystalline silicon solar cells

A solar cell and process technology, which is applied in metal material coating process, sustainable manufacturing/processing, circuit, etc., can solve the problems of battery sheet efficiency drop, lack of hydrogen passivation effect, etc., and achieve conversion efficiency without drop, The scheme is simple and feasible, and the effect of low cost

Active Publication Date: 2017-03-29
HENGDIAN GRP DMEGC MAGNETICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

while SiO 2 When the film is formed, a large amount of hydrogen ions will not be generated, and it does not have a good hydrogen body passivation effect, only surface passivation
Compared with the conventional single silicon nitride film coating process, the silicon dioxide-silicon nitride laminated film process will cause a decrease in cell efficiency

Method used

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  • A PECVD coating process for preparing component crystalline silicon solar cells
  • A PECVD coating process for preparing component crystalline silicon solar cells
  • A PECVD coating process for preparing component crystalline silicon solar cells

Examples

Experimental program
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Embodiment 1

[0027] The P-type 156 polysilicon wafers are successively subjected to several processes of acid texturing, diffusion, and wet etching cleaning. According to the scheme of the present invention, silicon nitride-silicon dioxide-nitrogen is prepared in a tubular PECVD furnace tube. Silicon nitride laminated film; the specific process for preparing the inner silicon nitride film is: SiH 4 The flow rate is 1000sccm, and NH is fed 3 The flow rate is 5000sccm, the pressure in the furnace tube is set at 1700mTorr, the temperature is set at 450°C, the radio frequency power is set at 3000W, and the coating time is set at 30s to obtain an inner silicon nitride film with a film thickness of 10nm and a refractive index of 2.1; then prepare the intermediate layer of silicon dioxide film, the specific process is: SiH 4 The flow rate is 1000sccm, through N 2 The O flow rate is 2500 sccm; the pressure in the furnace tube is set at 1700mTorr, the temperature is set at 450°C, and the radio fr...

Embodiment 2

[0029] The P-type 125 monocrystalline silicon wafers are sequentially subjected to several processes of alkali texturing, diffusion, and dry etching cleaning. According to the scheme of the present invention, silicon nitride—silicon dioxide—is prepared in a tubular PECVD furnace tube. —Silicon nitride laminated film; the specific process for preparing the inner silicon nitride film is: SiH 4 The flow rate is 1000sccm, and NH is fed 3 The flow rate is 4500sccm, the pressure in the furnace tube is set at 1700mTorr, the temperature is set at 450°C, the radio frequency power is set at 3000W, and the coating time is set at 20s to obtain an inner silicon nitride film with a film thickness of 6nm and a refractive index of 2.1; then prepare the intermediate layer of silicon dioxide film, the specific process is: SiH 4 The flow rate is 1000sccm, through N 2 The flow rate of O is 2000sccm; the pressure in the furnace tube is set at 1700mTorr, the temperature is set at 450°C, and the r...

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Abstract

The invention discloses a PECVD coating technology used for preparing an assembly anti-PID crystal silicon solar energy battery, and an anti-PID solar energy battery assembly can be prepared under prerequisite that the transition efficiency of battery piece is not decreased. The method is characterized in that a silicon nitride- silicon dioxide-silicon nitride lamination antireflection film is deposited on a silicon chip surface, the lamination antireflection film has the characteristics that the internal layer silicon nitride membrane has good hydrogen passivation effect, transition efficiency of battery piece is not decreased, a silica membrane has Na4 ions obstruction characteristic, so that the assembly has anti-PID effect. The technology has the beneficial effect that the PECVD coating technology is adjusted, no equipment is added, battery process operation is not increased, the anti-PID effect can be realized under prerequisite that transition efficiency of battery piece is not decreased; The scheme is simple and feasible, cost is low, the technology can be used for large industrial production; the technology is suitable for all the tubular type PECVD coating equipment for monocrystalline or polycrystalline crystal silicon solar energy battery.

Description

technical field [0001] The invention relates to the field of photovoltaic technology, in particular to a PECVD coating process for crystalline silicon solar cells used to prepare components with anti-PID characteristics. Background technique [0002] As an alternative to traditional energy generation technology, "photovoltaic" is considered to be one of the most promising new energy industries. In recent years, the photovoltaic industry based on crystalline silicon solar cells has developed on a large scale, and photovoltaic products have been used in various places and industries. However, with the development of the industry and the improvement of demand, the quality requirements of photovoltaic products are becoming more and more stringent. For example, the ability of components to resist PID (Potential Induced Degradation, potential-induced degradation) has always been one of the most important aspects to measure the quality of photovoltaic components. [0003] The PID...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/513C23C16/34C23C16/40H01L31/18
CPCC23C16/345C23C16/40C23C16/513H01L31/18Y02P70/50
Inventor 陈金灯李虎明
Owner HENGDIAN GRP DMEGC MAGNETICS CO LTD
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