Manufacturing method of biological neural synapsis bionic electronic devices and products thereof
A technology of neural synapses and electronic devices, applied in the direction of electrical components, specific application simulation processes, etc., can solve the problems of synaptic device units not realizing ultra-low energy consumption operation, etc., to facilitate large-scale integration, improve microstructure and corresponding Effects of electrical performance, ultra-low power operation
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Embodiment 1
[0036] The preparation method of the neurosynaptic bionic electronic device unit of the present embodiment includes the following steps:
[0037] Step 1. Prepare a 20nm thick titanium thin film and a 150nm thick platinum thin film sequentially on the surface of the substrate as a conductive layer by sputtering.
[0038] In this embodiment, the substrate is a thermally oxidized silicon wafer, and a silicon dioxide isolation dielectric layer is grown on the single crystal silicon to form a thermally oxidized silicon wafer as an insulating substrate. A conductive layer is formed on one side of the silicon dioxide layer of the thermally oxidized silicon wafer.
[0039] Among them, the 20nm thick titanium film is used as a buffer layer, and its main function is to increase the mechanical bonding force between the platinum film and the thermally oxidized silicon wafer.
[0040] Step 2, using magnetron sputtering to prepare a ZnO film with a thickness of 300nm as an insulating film....
Embodiment 2
[0049] Same as Example 1, the difference is that the thickness of the ZnO film prepared in step 2 is 15nm, the amplitude of the first pulse (positive pulse) applied in step 4 is 0.8V, and the second pulse (negative pulse) The amplitude is 0.2V.
[0050] Correspondingly, the difference between the bionic synapse bionic electronic device prepared in this example and Example 1 is that the thickness of the ZnO film in the middle layer is 15 nm, and the pulse voltage used in step 4 is different.
[0051] For the Cu / ZnO / Pt stack structure processed by the two-step voltage method, apply a forward pulse voltage with an amplitude of 5mV and a width of 10ns, and use a voltage of 1mV to read the current value in real time. image 3 This is the relationship between the post-synaptic excitatory current changing with time. It can be seen that under the excitation of a positive pulse voltage with an amplitude of 5mV and a width of 10ns, the device current reaches a peak of 1.3nA, and then d...
Embodiment 3
[0053] Same as Example 1, except that the electrically insulating film prepared in step 2 is amorphous carbon (a-C) with a thickness of 10 nm, the sputtering target is graphite, and the sputtering atmosphere is nitrogen or a mixed gas of nitrogen and argon. The amplitude of the first pulse (positive pulse) applied in step 4 is 3V, and the amplitude of the second pulse (negative pulse) is 0.5V.
[0054] Correspondingly, the difference between the bionic synapse bionic electronic device prepared in this example and Example 1 is that the middle layer is an a-C film with a thickness of 10 nm, and the pulse voltage used in step 4 is different.
[0055] For the Cu / a-C / Pt stack structure processed by the two-step voltage method, apply a forward pulse voltage with an amplitude of 10mV and a width of 100ns, and use a voltage of 1mV to read the current value in real time. Figure 4 This is the relationship between the post-synaptic excitatory current changing with time. It can be seen ...
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