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Compound for a photoresist composition

A technology of photoresist and compound, which is applied in the field of the compound shown in the formula, can solve the problems of poor uniformity of line width and decreased smoothness of the side wall of the pattern, etc.

Active Publication Date: 2015-04-22
ZHEJIANG YONGTAI NEW MATERIAL CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In conventionally known photoresist compositions, there is a problem that line edge roughness occurs due to generation of continuous waves, etc., that is, the smoothness of pattern side walls decreases, and as a result, the uniformity of line width deteriorates

Method used

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  • Compound for a photoresist composition
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  • Compound for a photoresist composition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0093] A photoresist composition was prepared by mixing the compound of formula (I), resin, and acid generator in a solvent according to the following ratio, and filtering through a fluororesin filter with a pore size of 0.2 μm.

[0094] components

[0095] The formula (I) compound in the preparation example 1 uses the compound A1 prepared in the synthesis example 1; Resin uses ECPMA The acid generator uses 2,6-dinitrobenzyl p-toluenesulfonate; the solvent uses ethylene glycol dimethyl ether.

Embodiment 2

[0097] A photoresist composition was prepared by mixing the compound of formula (I), resin, and acid generator in a solvent according to the following ratio, and filtering through a fluororesin filter with a pore size of 0.2 μm.

[0098] components

[0099] The formula (I) compound in the preparation example 2 uses the compound A2 prepared in the synthesis example 2; Resin uses ECPMA The acid generator uses 2,6-dinitrobenzyl p-toluenesulfonate; the solvent uses ethylene glycol dimethyl ether.

Embodiment 3

[0101] A photoresist composition was prepared by mixing the compound of formula (I), resin, and acid generator in a solvent according to the following ratio, and filtering through a fluororesin filter with a pore size of 0.2 μm.

[0102] components

[0103] The formula (I) compound in the preparation example 3 uses the compound A3 prepared in the synthesis example 3; Resin uses ECPMA The acid generator uses 2,6-dinitrobenzyl p-toluenesulfonate; the solvent uses ethylene glycol dimethyl ether.

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Abstract

The invention relates to a compound for a photoresist composition. The compound is suitable for excimer laser planographic printing adopting ArF and KrF, EUV photoetching, EB photoetching and the like, and has superior photoresist capacities such as sensitiveness and clarity, and line edge roughness and pattern outlines which are especially improved are obtained.

Description

technical field [0001] The invention relates to a compound represented by formula (I), which is used for the photoresist composition for manufacturing computer chips and integrated circuits. Background technique [0002] Photoresist compositions are used in the microlithographic process of making miniaturized electronic components, such as in the manufacture of computer chips and integrated circuits. Typically, in these processes, a thin film coating of a photoresist composition is first applied to a substrate material, then the solvent in the photoresist composition is evaporated and the coating is fixed on the substrate, and finally the coated substrate is irradiated. The photoresist on the surface is exposed in an imaging mode. [0003] Radiation causes the chemical transformation of the coated surface, with visible light, ultraviolet (UV) light, electron beam, and X-ray radiant energy being the types of radiation commonly used in microlithography today. After exposure,...

Claims

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Application Information

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IPC IPC(8): C07C211/64G03F7/004G03F7/00
CPCG03F7/004G03F7/039
Inventor 王莺妹何人宝
Owner ZHEJIANG YONGTAI NEW MATERIAL CO LTD
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