Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor device for improving current expanding

A technology of current expansion and current expansion layer, applied in the field of semiconductor devices for improving current expansion, can solve the problems of device performance decline, voltage increase, limited conductivity, etc., achieve flexible chip structure design and electrode distribution, reduce occupied area, The effect of improving the length

Active Publication Date: 2015-04-22
南京嘉视信电子有限公司
View PDF6 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As another example, patents such as CN 201310443689.0 propose a scheme of sequentially growing a first-type current spreading layer, a first-type confinement layer, an active layer, a second-type confinement layer, and a second-type current spreading layer on a substrate layer, but the formed Unless the current spreading layer is very thick, the conductivity is still very limited, but if the thickness is too large, it will lead to many problems such as degradation of device performance and high cost.
Taking GaN-based LEDs as an example, even if the thickness of n-GaN reaches 4μm, its surface resistance is as high as about 12Ω / □ (Solid-State Electronics, 2002, 46(8), 1235-1239), resulting in a chip larger than 14mil, if Do not use interdigitated n-electrodes or multiple n-electrodes, due to the dense current, the voltage will increase and affect the light effect

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device for improving current expanding
  • Semiconductor device for improving current expanding
  • Semiconductor device for improving current expanding

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] see Figure 1a , which is a schematic cross-sectional structure diagram of the epitaxial wafer of Embodiment 1 of the improved current spreading LED of the present invention.

[0041] The device includes a substrate 101, on which a metal tungsten mesh grid 102 is arranged, the thickness of the tungsten metal layer is preferably about 10 nanometers to 200 nanometers, the line width of the tungsten metal is about 5 to 10 microns, and the spacing is about 100 μm. ~300 microns, and then grow a GaN buffer layer at a temperature of about 550 degrees, with a thickness of about 30nm, and then grow n-GaN layer 103, InGaN / GaN multiple quantum well layer 104, p-GaN layer 105 and other structures on it. AlGaN layers and the like may also be inserted between the layers. figure 2 It is a three-dimensional schematic diagram of the metal tungsten mesh grid 102 formed on the substrate 101 before epitaxial growth of the device.

[0042] ginseng Figure 1b shown, through photoresist or ...

Embodiment 2

[0048] Example 2: Similar to Example 1, the only difference is that after growing an epitaxial layer with a certain thickness, the epitaxial wafer is taken out, and the current spreading layer is inserted by deposition or transfer method, and then the epitaxial growth is performed again.

Embodiment 3

[0049] Example 3: Its epitaxial structure is also as Figure 1a shown.

[0050] Such as Image 6 As shown, a p-GaN mesa is formed by photolithography and etching to expose the n-GaN contact hole 507, and then a p-GaN transparent ohmic contact conductive layer 514 is prepared in the p-GaN mesa region.

[0051] Further, a metal layer 515 and pad metal layer 516 are sequentially deposited and patterned on the n-GaN and p-GaN surfaces. Metal layer 515 forms an ohmic contact on the n-GaN surface and assists current spreading on the p-GaN surface.

[0052] The material of the transparent ohmic contact conductive layer is preferably ITO, NiAu, etc.; the material of the pad metal layer is preferably TiAlTiAu, CrAu, etc.

[0053] Figure 7a is a schematic plan view of the device, Figure 7b is a schematic plan view of the device without inserting the current spreading layer as a comparison. Wherein 617 is a p-GaN mesa region. Compared Figure 7a and Figure 7b It can be seen...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a semiconductor device for improving current expanding. The semiconductor device comprises a substrate, a current expanding layer and an epitaxial layer, wherein the current expanding layer and the epitaxial layer are formed on the substrate. The current expanding layer is made of a conducting material which is different from the semiconductor material of which the epitaxial layer is made. The electrical conductivity of the conducting material is higher than that of the epitaxial layer material, and therefore the distance of current expanding is bigger. The semiconductor device of larger size and power can be obtained, it is not needed to adopt extra electrode lengthening or multi-electrode parallel connection used for current expanding. In this way, current expanding is improved, and uniformity, power and efficiency of devices are improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a semiconductor device for improving current expansion. Background technique [0002] Existing semiconductor devices increasingly use heteroepitaxy, especially on insulating or high-resistance substrates, and device structures grown on these substrate materials mostly adopt front-chip or flip-chip structures. Since the electrodes are on the same side, the current expansion, especially the current expansion of the polar layer close to the substrate, needs to be completed through the semiconductor material passing through the polar layer. In some devices, due to the influence of the doping characteristics of semiconductor materials, the distance that the current expansion of this layer can expand is limited. When manufacturing large-area and high-power devices, it is necessary to specially design current expansion electrodes, such as interdigitated electrodes, which o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14
CPCH01L33/14
Inventor 周玉刚修向前谢自力陈鹏刘斌张荣
Owner 南京嘉视信电子有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com