A semiconductor device with improved current spreading

Abstract

The invention discloses a semiconductor device for improving current expanding. The semiconductor device comprises a substrate, a current expanding layer and an epitaxial layer, wherein the current expanding layer and the epitaxial layer are formed on the substrate. The current expanding layer is made of a conducting material which is different from the semiconductor material of which the epitaxial layer is made. The electrical conductivity of the conducting material is higher than that of the epitaxial layer material, and therefore the distance of current expanding is bigger. The semiconductor device of larger size and power can be obtained, it is not needed to adopt extra electrode lengthening or multi-electrode parallel connection used for current expanding. In this way, current expanding is improved, and uniformity, power and efficiency of devices are improved.

Description

technical field

[0001] The invention belongs to the technical field of semiconductor devices, in particular to a semiconductor device for improving current expansion. Background technique

[0002] Existing semiconductor devices increasingly use heteroepitaxy, especially on insulating or high-resistance substrates, and device structures grown on these substrate materials mostly adopt front-chip or flip-chip structures. Since the electrodes are on the same side, the current expansion, especially the current expansion of the polar layer close to the substrate, needs to be completed through the semiconductor material passing through the polar layer. In some devices, due to the influence of the doping characteristics of semiconductor materials, the distance that the current expansion of this layer can expand is limited. When manufacturing large-area and high-power devices, it is necessary to specially design current expansion electrodes, such as interdigitated electrodes, which o...

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