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Solar cell based on gan nanowire three-dimensional structure and its preparation method

A solar cell and three-dimensional structure technology, applied in the field of solar cells, can solve problems such as uneven distribution of suede surface size, increased defect density on the substrate surface, and difficulty in reducing the light reflection coefficient of the substrate, so as to reduce reflection and improve conversion efficiency , improve the effect of absorption and utilization

Active Publication Date: 2016-10-12
SPIC XIAN SOLAR POWER CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the uneven size and wide distribution of the suede surface in this structure, the defect density on the substrate surface is greatly increased, and it is difficult to obtain high-quality light trapping by the suede surface on the front surface, and it is not easy to reduce the reflection coefficient of the substrate to light.

Method used

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  • Solar cell based on gan nanowire three-dimensional structure and its preparation method
  • Solar cell based on gan nanowire three-dimensional structure and its preparation method
  • Solar cell based on gan nanowire three-dimensional structure and its preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0033] Embodiment 1, making a GaN nanowire three-dimensional solar cell with a diameter of 50 nm and a length of 10 μm for each GaN nanowire.

[0034] refer to image 3 , the production steps of this example are as follows:

[0035] Step 1: Clean the N-type silicon substrate to remove surface pollutants.

[0036] (1.1) Use acetone and isopropanol to alternately perform ultrasonic cleaning on the N-type silicon substrate to remove organic contamination on the substrate surface;

[0037] (1.2) Prepare a 1:1:3 mixed solution of ammonia, hydrogen peroxide, and deionized water, and heat it to 120°C. Place the N-type silicon substrate in the mixed solution and soak it for 12 minutes. After taking it out, wash it with a large amount of deionized water. Rinse to remove inorganic pollutants on the surface of the N-type silicon substrate;

[0038] (1.3) Soak the N-type silicon substrate in HF acid buffer for 2 minutes to remove the oxide layer on the surface.

[0039] Step 2: Etchin...

Embodiment 2

[0053] Example 2, making a GaN nanowire three-dimensional structure solar cell with each GaN nanowire having a diameter of 80 nm and a length of 15 μm.

[0054] refer to image 3 , the production steps of this example are as follows:

[0055] Step 1: cleaning the N-type silicon substrate to remove surface pollutants.

[0056] This step is the same as Step 1 of Example 1.

[0057] Step 2: Etching the surface of the N-type silicon substrate to form an inverted trapezoid shape.

[0058] A three-dimensional inverted trapezoid repeating unit with a depth of 3 μm is formed on the surface of the silicon substrate by dry etching. Dry etching process parameters are: RF power is 100W, chlorine gas flow rate is 20ml / min, BCl 3 The flow rate is 8ml / min, the Ar flow rate is 5ml / min, and the pressure in the reaction chamber is 10mTorr.

[0059] Step 3: Fabricate a GaN nanowire texture layer on the upper surface of the inverted trapezoidal N-type silicon substrate.

[0060] (3a) take a...

Embodiment 3

[0071] Example 3, making a GaN nanowire three-dimensional structure solar cell with each GaN nanowire having a diameter of 100 nm and a length of 20 μm.

[0072] refer to image 3 , the production steps of this example are as follows:

[0073] Step A: cleaning the N-type silicon substrate to remove surface pollutants.

[0074] This step is the same as Step 1 of Example 1.

[0075] Step B: Etching the surface of the N-type silicon substrate to form an inverted trapezoid shape.

[0076] A three-dimensional inverted trapezoid repeating unit with a depth of 4 μm is formed on the surface of the silicon substrate by dry etching. Dry etching process parameters are: RF power is 100W, chlorine gas flow rate is 20ml / min, BCl 3 The flow rate is 8ml / min, the Ar flow rate is 5ml / min, and the pressure in the reaction chamber is 10mTorr.

[0077] Step C: Fabricate a GaN nanowire texture layer on the upper surface of the inverted trapezoidal N-type silicon substrate.

[0078] (C.1) Take...

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Abstract

The invention discloses a solar cell based on a GaN nanowire three-dimensional structure and a manufacturing method of the solar cell. The solar cell comprises an N-type silicon substrate (6) and a back electrode (7). A trapezoid shape is formed on the upper surface of the N-type silicon substrate (6) through dry etching. A GaN nanowire suede layer (5), an intrinsic polysilicon layer (4), a P-type polysilicon layer (3) and an ITO transparent conducting thin film (2) are formed on trapezoids in sequence, wherein the GaN nanowire suede layer (5) is formed through transferring, the intrinsic polysilicon layer (4) and the P-type polysilicon layer (3) are formed through deposition, and the ITO transparent conducting thin film (2) is formed through sputtering; finally, the three-dimensional inverted-trapezoid integral structure is obtained. Front electrodes (1) are formed at the top end of the structure through electron beam evaporation. Each GaN nanowire in the GaN nanowire suede layer is 50 nm-100 nm in diameter and 10 microns-20 microns in length, the GaN nanowire suede layer has strong light trapping characteristics, and the light reflectivity of the surface of the silicon substrate can be reduced. Absorption and utilization of photons by the solar cell are enhanced, conversion efficiency of the solar cell is improved, and the solar cell based on the GaN nanowire three-dimensional structure and the manufacturing method of the solar cell can be used for photovoltaic power generation.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a solar cell based on a GaN nanowire three-dimensional structure, which can be used for photovoltaic power generation. Background technique [0002] Since solar energy is abundant and clean, photovoltaic devices are attractive for a wide range of energy-related applications. However, the current low photoelectric conversion efficiency of silicon-based and other solar cells makes solar cells costly and hinders their development and application. The photoelectric conversion rate of a solar cell is defined as the ratio of the electrical output of the solar cell to the incident solar energy on the surface area of ​​the solar cell. In the manufacture of actual solar cells, there are many factors that limit the performance of the device, so the influence of these factors must be considered in the design of solar cells and the selection of materials. [0003] In order to improve t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/077H01L31/054H01L31/18B82Y40/00
CPCB82Y40/00H01L31/0328H01L31/052H01L31/077H01L31/1804H01L31/182H01L31/1856Y02E10/52Y02E10/544Y02E10/546Y02E10/547Y02P70/50
Inventor 林瀚琪郭辉黄海栗苗东铭胡彦飞张玉明
Owner SPIC XIAN SOLAR POWER CO LTD