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Stress-released GaN-based LED structure and manufacturing method

A light-emitting diode and stress release technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as complex processes, and achieve the effects of improving wavelength uniformity, improving yield, and eliminating stress.

Inactive Publication Date: 2015-04-29
GUANGDONG DELI PHOTOELECTRIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the actual cutting process, in terms of the depth and shape of the scratches, it is necessary to fine-tune the laser energy, gathering position, cutting speed and other parameters of the laser stealth cutting process to achieve real stress relief, and the process is relatively complicated.

Method used

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  • Stress-released GaN-based LED structure and manufacturing method
  • Stress-released GaN-based LED structure and manufacturing method
  • Stress-released GaN-based LED structure and manufacturing method

Examples

Experimental program
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Effect test

no. 1 example

[0028] In the first embodiment, the GaN-based light-emitting diode structure provided by the present invention has a cross section as figure 1 shown, including SiO with bar 2 The sapphire substrate 1 and the GaN-based epitaxial layer 2 of the isolation zone 3, wherein the GaN-based epitaxial layer 2 includes a GaN buffer layer, an N-type GaN layer, a light emitting layer, and a P-type GaN material layer. The production method of this embodiment is as follows:

[0029] 1. Fabricate two rows and two columns of SiO on the growth surface of the sapphire substrate by PECVD 2 Strip barrier 3, such as figure 2 As shown, each SiO 2 The isolation zone 3 has a thickness of 15-20um and a width of 20um;

[0030] 2. A GaN-based epitaxial layer is grown by MOCVD on the growth surface of the sapphire substrate except the isolation zone.

no. 2 example

[0031] In the second embodiment, the GaN-based light-emitting diode structure provided by the present invention has a cross section as image 3 shown, including bars with Si x N y The sapphire substrate 1 and the GaN-based epitaxial layer 2 of the isolation zone 3, wherein the GaN-based epitaxial layer 2 includes a GaN buffer layer, an N-type GaN layer, a light emitting layer, and a P-type GaN material layer. The production method of this embodiment is as follows:

[0032] 1. Fabricate single-row and single-column Si on the growth surface of the sapphire substrate by PECVD x N y Strip barrier 3, such as Figure 4 As shown, each SiO 2 The isolation zone 3 has a thickness of 10-15um and a width of 20um;

[0033] 2. A GaN-based epitaxial layer is grown by MOCVD on the growth surface of the sapphire substrate except the isolation zone 3 .

no. 3 example

[0034] In the third embodiment, the GaN-based light-emitting diode structure provided by the present invention has a cross-section as Figure 5 As shown, it includes a sapphire substrate 1 with a strip-shaped isolation trench 4 and a GaN-based epitaxial layer 2, wherein the GaN-based epitaxial layer 2 includes a GaN buffer layer, an N-type GaN layer, a light-emitting layer, and a P-type nitride layer. Gallium material layer. The production method of this embodiment is as follows:

[0035] 1. Etch two rows and two columns of strip-shaped isolation trenches 4 on the sapphire substrate through the ICP process, such as Image 6 As shown, the depth of the isolation trench is 10-15um and the width is 20um;

[0036] 2. A GaN-based epitaxial layer is grown by MOCVD on the growth surface of the sapphire substrate except for the isolation trench.

[0037] In the specific examples listed above, the growth surface of the sapphire substrate has been subjected to growth isolation treatme...

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Abstract

The invention discloses a stress-released GaN-based LED structure which comprises a sapphire substrate and a GaN-based epitaxial layer. The stress-released GaN-based LED structure is characterized in that crisscross strip-type isolation strips or crisscross strip-type isolation channels are formed in the growth plane of the sapphire substrate; the GaN-based epitaxial layer is arranged in an area, without the isolation strips or the isolation channels, on the growth plane of the sapphire substrate. The invention further discloses a manufacturing method for the GaN-based LED structure. According to the stress-released GaN-based LED structure and the manufacturing method, the internal stress of an epitaxial layer of a large-sized substrate can be simply and conveniently released, the uniformity of wavelengths in the epitaxial layer can be improved, and the yield of a GaN-based LED chip can be improved.

Description

technical field [0001] The invention belongs to the field of light-emitting diodes, and in particular relates to a GaN-based light-emitting diode structure and a manufacturing method capable of effectively releasing stress. Background technique [0002] At present, under the background of the increasingly serious problem of global warming, saving energy and reducing greenhouse gas emissions has become an important issue faced by the whole world. A low-carbon economy based on low energy consumption, low pollution, and low emissions will become an important direction of economic development. In the field of lighting, semiconductor light-emitting products represented by LED (light-emitting diode) have the advantages of energy saving, environmental protection, long light source life and small size, and are attracting the attention of the world. [0003] The current commercial GaN-based light-emitting diodes are mainly epitaxially grown on sapphire Al by metal-organic compound c...

Claims

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Application Information

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IPC IPC(8): H01L33/20H01L33/40H01L33/00
CPCH01L33/20H01L33/007H01L33/12H01L33/32
Inventor 郝锐林振贤罗长得
Owner GUANGDONG DELI PHOTOELECTRIC
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