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Inverted organic electroluminescence device and preparation method thereof

An electroluminescent device, an inverted technology, which is applied in the fields of electro-solid devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of difficult to improve light efficiency, high work function, and unfavorable electron injection of inverted structure devices.

Inactive Publication Date: 2015-04-29
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the inverted OLED light-emitting device that emits light from the bottom, a highly transparent electrode is usually required as the cathode. At present, transparent conductive oxide films are commonly used as the cathode. Although it has high transmittance, it is not good for electron injection due to its high work function. , making it difficult to improve the light efficiency of the inverted structure device

Method used

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  • Inverted organic electroluminescence device and preparation method thereof
  • Inverted organic electroluminescence device and preparation method thereof
  • Inverted organic electroluminescence device and preparation method thereof

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preparation example Construction

[0045] like figure 2 As shown, the preparation method of an inverted organic electroluminescent device in one embodiment includes the following steps:

[0046] Step S310: providing a cathode substrate.

[0047] Wherein, the cathode substrate can be transparent conductive glass commonly used in this field, preferably indium tin oxide conductive glass (ITO), aluminum zinc oxide conductive glass (AZO) or indium zinc oxide conductive glass (IZO); more preferably indium Tin oxide glass (ITO); and the sheet resistance of the indium tin oxide conductive glass is 5Ω / □˜100Ω / □.

[0048] Step S320: preparing a P-type semiconductor layer by vacuum electron beam evaporation on the cathode substrate, and preparing an N-type semiconductor layer by vacuum electron beam evaporation on the P-type semiconductor layer to obtain a PN layer. Among them, the material of the P-type semiconductor layer is nickel oxide (NiO) or copper oxide (CuO), and the material of the N-type semiconductor layer i...

Embodiment 1

[0064] The structure of the inverted organic electroluminescence device of the present embodiment is: ITO / NiO / ZnO / Bphen / NPB:Ir(MDQ) 2 (acac) / NPB / Ag.

[0065] The preparation of the inverted organic electroluminescence device of this embodiment is as follows:

[0066] (1) Provide and clean the ITO cathode substrate, wherein the square resistance of the ITO cathode substrate is 5Ω / □, and the ITO cathode substrate is expressed as: ITO.

[0067] (2) Form a PN layer on the cathode substrate: in a vacuum of 1×10 -5 In Pa's vacuum coating system, electron beam evaporation technology is used to prepare a P-type semiconductor layer on the ITO cathode substrate. The thickness of the P-type semiconductor layer is 2nm, the material is nickel oxide (NiO), and the evaporation rate is 0.01nm / s , the P-type semiconductor layer is expressed as: NiO; and then the N-type semiconductor layer is prepared on the P-type semiconductor layer by electron beam evaporation technology, wherein the thick...

Embodiment 2

[0074] The structure of the inverted organic electroluminescent device of this embodiment is: ITO / CuO / SnO 2 / TPBi / Alq 3 :DCJTB / MeO-TPD / Al.

[0075] The preparation of the inverted organic electroluminescence device of this embodiment is as follows:

[0076] (1) Provide and clean the ITO cathode substrate, wherein the square resistance of the ITO cathode substrate is 100Ω / □, and the ITO cathode substrate is expressed as: ITO.

[0077] (2) Form a PN layer on the cathode substrate: in a vacuum of 1×10 -3 In Pa's vacuum coating system, electron beam evaporation technology is used to prepare a P-type semiconductor layer on the ITO cathode substrate. The thickness of the P-type semiconductor layer is 10nm, the material is copper oxide (CuO), and the evaporation rate is 0.1nm / s , the P-type semiconductor layer is expressed as: CuO; and then an N-type semiconductor layer is prepared on the P-type semiconductor layer by electron beam evaporation technology, wherein, the thickness of...

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Abstract

The invention discloses an inverted organic electroluminescence device which comprises a cathode substrate, an organic luminous function layer and an anode layer which are stacked in sequence, and further comprises a PN layer arranged between the cathode substrate and the organic luminous function layer, wherein the PN layer comprises a P-type semiconductor layer stacked on the cathode substrate and an N-type semiconductor layer stacked on the P-type semiconductor layer; the organic luminous function layer is stacked on the N-type semiconductor layer; the P-type semiconductor layer is made from nickel oxide or copper oxide, and the N-type semiconductor layer is made from zinc oxide, tin oxide or cerium dioxide. The inverted organic electroluminescence device is relatively high in luminous efficiency. In addition, the invention further provides a preparation method for the inverted organic electroluminescence device.

Description

technical field [0001] The invention relates to the field of electronic devices, in particular to an inverted organic electroluminescent device and a preparation method thereof. Background technique [0002] Organic Light Emission Diode, hereinafter referred to as OLED, has the characteristics of high brightness, wide range of material selection, low driving voltage, fully cured active light emission, etc., and has the advantages of high definition, wide viewing angle, and fast response speed. It is a display technology and light source with great potential, which conforms to the development trend of mobile communication and information display in the information age, as well as the requirements of green lighting technology, and is the focus of many researchers at home and abroad. [0003] At present, the development of OLED is very rapid. In order to expand its application field and simplify its manufacturing process, researchers have developed OLED light-emitting devices w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/52H01L51/54H01L51/56
CPCH10K50/11H10K71/00
Inventor 周明杰冯小明钟铁涛王平
Owner OCEANS KING LIGHTING SCI&TECH CO LTD