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Semiconductor apparatus

A technology of semiconductors and terminals, applied in semiconductor devices, output power conversion devices, transistors, etc., can solve the problems of low gate threshold, influence of parasitic capacitance, difficulty in improving gate voltage switching speed, etc., to achieve improved tolerance and reliability The effect of self-connection

Inactive Publication Date: 2015-05-06
DENSO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, GaN-HEMTs with high DC transfer conductance gm are more susceptible to the influence of parasitic capacitance than conventional semiconductor devices because the gate capacitance of the device itself is small (for example, about 1 / 4 of conventional devices).
GaN-HEMT has a low gate threshold (for example, about 2V) and a low gate withstand voltage (for example, about 5V), so it is difficult to improve the switching speed by increasing the gate voltage.

Method used

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  • Semiconductor apparatus
  • Semiconductor apparatus
  • Semiconductor apparatus

Examples

Experimental program
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Effect test

no. 1 Embodiment approach

[0069] Below, refer to figure 1 and figure 2 The first embodiment will be described. The load driving device 1 (corresponding to a semiconductor device) is used, for example, in an electronic control device mounted on a vehicle, and performs ON / OFF operation in accordance with a driving signal input from an external circuit (not shown), and receives a supply of a battery voltage VB. A current flows through the coil 2 as an inductive load. The load driving device 1 is composed of an element module 3 and a driver IC 4 .

[0070] The element module 3 is configured by modularizing an N-channel type FET 5 and a voltage detection circuit 6 into one package. The FET 5 has a voltage between the drain terminal D (corresponding to the second terminal) and the source terminal S based on the gate voltage VGS applied between the gate terminal G and the source terminal S (corresponding to the first terminal). Switching elements such as MOSFETs and GaN-HEMTs whose on-state changes. Ins...

no. 2 Embodiment approach

[0096] refer to image 3 A second embodiment will be described. The drive IC 22 of the load drive device 21 includes a control circuit 23 . The control circuit 23 is composed of a resistor 24 and a MOSFET 14 connected in series between the terminals of the power supply 12 with the output terminal n2 interposed therebetween. The threshold voltage of the MOSFET 14 is set to be equal to the aforementioned threshold voltage Vth.

[0097] When no surge voltage is applied, the detection voltage is lower than the threshold voltage Vth. Therefore, the MOSFET 14 is turned off, and the voltage Vc is applied to the gate of the MOSFET 11 via the resistor 24 . On the other hand, when a surge voltage is generated and the drain-source voltage VDS of the FET 5 becomes equal to or higher than the voltage Vm1, the detection voltage is equal to or lower than the gate withstand voltage of the MOSFET 14 and is higher than the threshold voltage Vth. As a result, the MOSFET 14 is turned on and t...

no. 3 Embodiment approach

[0100] refer to Figure 4 A third embodiment will be described. The drive IC 26 of the load drive device 25 includes a control circuit 27 . The control circuit 27 is composed of a MOSFET 13 and a resistor 28 connected in series between terminals of the power supply 12 with the output terminal n2 interposed therebetween. The MOSFET 13 is configured to be turned off when the detection voltage exceeds the threshold voltage Vth.

[0101] When no surge voltage is applied, the detection voltage is lower than the threshold voltage Vth. Accordingly, the MOSFET 13 is turned on, and the voltage Vc is applied to the gate of the MOSFET 11 via the MOSFET 13 . On the other hand, when a surge voltage occurs and the drain-source voltage VDS of the FET 5 becomes equal to or higher than the voltage Vm1, the detection voltage is equal to or lower than the gate breakdown voltage of the MOSFET 13 and is higher than the threshold voltage Vth. As a result, the MOSFET 13 is turned off and the swi...

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Abstract

A semiconductor apparatus is provided with: a switching element (5); a voltage detection circuit (6, 31, 34, 37, 40, 43); a switch circuit (8, 73); and a control circuit (9, 23, 27, 83). The voltage detection circuit outputs a detection voltage corresponding to a voltage applied between first and second terminals of the switching element. The switch circuit is connected in series with a gate drive line (10) connected to a gate terminal of the switching element, and switched to a high impedance state or a low impedance state depending on a control signal. When the detection voltage is not more than a predetermined threshold voltage, the control circuit outputs a control signal for switching the switch circuit to the low impedance state. When the detection voltage exceeds the threshold voltage, the control circuit outputs a control signal for switching the switch circuit to the high impedance state.

Description

[0001] This disclosure claims priority based on Japanese Patent Application No. 2012-190065 filed on August 30, 2012 and Japanese Patent Application No. 2012-258499 filed on November 27, 2012, and the descriptions thereof are incorporated herein. technical field [0002] The present disclosure relates to a semiconductor device with improved overvoltage tolerance. Background technique [0003] Not only inductive elements such as coils, but also resistive loads often have inductance due to wiring inductance and the like. When a transistor drives such an inductive load, a counter electromotive force is generated when the transistor is turned off. In a load drive circuit, a switching power supply circuit, an inverter circuit, etc., a diode for freewheeling is provided in parallel with a transistor or a load in order to prevent the generation of back electromotive force. However, even in this case, a surge voltage accompanying switching occurs, and therefore a means for protecti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/0814H03K17/082H03K17/16
CPCH03K17/0812H01L27/0629H01L29/2003H02M1/08H03K17/0412H03K17/08142H03K17/0822H03K17/166H03K2217/0027
Inventor 高须久志小林敦
Owner DENSO CORP