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Silicon carbide based circuit board and preparation method thereof

A silicon carbide-based and silicon-carbide ceramic-based technology, which is applied in circuits, electrical components, electric solid state devices, etc., can solve the problems of low heat dissipation efficiency of circuit boards, complicated preparation processes, waste of materials, etc., and achieves resource saving, simple process, Time saving effect

Active Publication Date: 2015-05-13
LONGKE ELECTRONICS HUIYANG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the conventional method in the prior art is to solder and paste the power components on the PCB, and then glue the PCB to heat sinks of various materials (such as aluminum profiles, alumina, graphene, silicon carbide, etc.) to form an integral part. , the existing technology has defects such as complicated preparation process, waste of materials, and environmental pollution (corrosion liquid pollution in conventional PCB board production), and the prepared circuit board has low heat dissipation effect and high price

Method used

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  • Silicon carbide based circuit board and preparation method thereof
  • Silicon carbide based circuit board and preparation method thereof
  • Silicon carbide based circuit board and preparation method thereof

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Embodiment Construction

[0029] The implementation of the present invention will be described in detail below in conjunction with the accompanying drawings. The accompanying drawings are only for reference and description, and do not constitute a limitation to the protection scope of the present invention.

[0030] The embodiment of a silicon carbide-based circuit board and its preparation method provided by the present invention is illustrated by the following examples:

[0031] An embodiment of the present invention provides a silicon carbide-based circuit board, including a silicon carbide ceramic substrate 1 and metal circuits printed on one or both sides of the silicon carbide ceramic substrate figure 2 , when metal circuit patterns are printed on both sides of the silicon carbide ceramic substrate, the metal circuit patterns printed on both sides of the silicon carbide substrate are the same or different, and the silicon carbide ceramic substrate with metal circuit patterns printed on both sides...

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Abstract

The invention relates to a silicon carbide based circuit board. The silicon carbide based circuit board comprises a silicon carbide ceramic base plate, and a metal line map which is printed on one or two surfaces of the silicon carbide ceramic base plate. A preparation method of the silicon carbide based circuit board comprises the steps of mixing materials; pressing and forming; sintering; processing and washing; performing screen printing; reducing. According to the silicon carbide based circuit board, a line board and a radiating plate are integrated, so that the resource can be saved; the silicon carbide based circuit board has the advantages of being high in radiating efficiency, high in radiating uniformity, low in process, and applicable to large-power apparatuses; the silicon carbide based circuit board also has a certain electromagnetic protection function; the preparation method of the silicon carbide based circuit board is simple in process, material saving, safe, environmentally friendly, greatly reduces the costs of production and processing, and saves working hours for the LED industry and the complete electronic machine enterprise.

Description

technical field [0001] The invention relates to the technical field of circuit board design, in particular to a silicon carbide-based circuit board and a preparation method thereof. Background technique [0002] After the discovery of silicon carbide (SiC) semiconductor ceramic materials at the beginning of the last century, it has been widely used in the field of overvoltage protection to make lightning arresters, protective components and other devices, and is used as a heating element in the field of electric high temperature. Due to the small nonlinear coefficient a value of SiC, low voltage gradient, and large material consumption, it has been gradually replaced by zinc oxide in the field of overvoltage protection since the 1970s, but due to the light specific gravity of silicon carbide (SiC) materials ( About 1.7), good thermal conductivity, low price, mature technology, and good insulation performance before semiconducting, and has a certain electromagnetic protection...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/48H01L33/64H01L33/62H01L23/498H01L23/367H01L23/373H01L23/552H01L21/48
CPCH01L33/48H01L21/48H01L23/367H01L23/373H01L23/498H01L23/552H01L33/62H01L33/64H01L33/642
Inventor 曾清隆陈泽同
Owner LONGKE ELECTRONICS HUIYANG