Flake type semiconductor laser pumping alkali metal laser system

A laser pumping and laser system technology, applied in the direction of lasers, laser components, phonon exciters, etc., can solve problems such as temperature gradient distribution, achieve uniform heating or cooling, uniform temperature distribution, and high beam quality laser output Effect

Inactive Publication Date: 2015-05-13
SOUTH WEST INST OF TECHN PHYSICS
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AI Technical Summary

Problems solved by technology

To alleviate the problem of temperature gradient distribution in the alkali metal vapor chamber when DPAL is working

Method used

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  • Flake type semiconductor laser pumping alkali metal laser system
  • Flake type semiconductor laser pumping alkali metal laser system
  • Flake type semiconductor laser pumping alkali metal laser system

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Embodiment Construction

[0028] refer to figure 1. In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In order to alleviate the problem of temperature gradient distribution in the alkali metal lumen of the DPAL, the present invention provides a sheet-type DPAL.

[0029] The thin-sheet semiconductor laser pumped alkali metal laser system includes: pump light wide narrowing system, pump beam homogenization and collimation system, alkali metal vapor cavity, alkali metal vapor temperature control system, pump light reflection system and laser resonant cavity . In the thin-sheet semiconductor laser pumped alkali metal laser system, the semiconductor laser light source 1 passes throu...

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Abstract

The invention provides a flake type semiconductor laser pumping alkali metal laser system. The laser system is able to speed up steam medium radiating speed and further lighten the temperature gradient distribution of a steam cavity. The flake type semiconductor laser pumping alkali metal laser system is realized through the following technical scheme: a semiconductor laser light source is narrowed through a pumping light line-width narrowing system, and then coupled by a pumping light beam homogenizing collimating system to enter an alkali metal steam cavity filled with alkali metal medium and buffer gas, so as to match up with the pumping line-width and absorbing line-width of an alkali metal atom; the pumping light beam homogenizing collimating system homogenizes and absorbs the pumping light; a pumping light reflecting system reflects the unabsorbed pumping light for many times to the alkali metal steam cavity; an alkali metal steam temperature control system is closed to a back end face of the alkali metal steam cavity; a planar and large-area temperature control method is applied to speed up the heat transmission in axial direction and reduces the temperature gradient distribution of the steam cavity in cross direction; a laser is oscillated in a laser resonate cavity to output.

Description

technical field [0001] The invention relates to a semiconductor pumped alkali metal vapor laser, in particular to a wafer type semiconductor laser pumped alkali metal vapor laser. Background technique [0002] Diode Pumped Alkali Vapor Laser (DPAL) is a new type of laser device that combines the advantages of solid-state laser and gas laser. It has the characteristics of high quantum efficiency, good beam quality and narrow line width. It has developed rapidly in recent years. New high-efficiency lasers. , It has broad application prospects in laser interference, laser cooling, directional energy transmission, environmental monitoring, material processing and medical magnetic resonance imaging systems. The semiconductor-pumped alkali metal vapor laser DPAL is a typical three-level laser, and its main gain medium is potassium (K), rubidium (Rb) and cesium (Cs) vapor. These three kinds of gain medium atoms have similar energy level structures. such as in image 3 In the ene...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/227H01S3/0941H01S3/041
Inventor 蔡和王浟韩聚洪张伟薛亮平安国斐王宏元周杰蒋志刚
Owner SOUTH WEST INST OF TECHN PHYSICS
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