Preparation method of low-temperature polysilicon thin film, thin film transistor and display device
A technology of polysilicon thin film and low-temperature polysilicon, which is applied in transistors, semiconductor devices, electric solid state devices, etc., can solve the problems of poor uniformity of polysilicon thin films, and achieve the effect of ensuring uniformity and large grain size
Active Publication Date: 2019-03-15
BOE TECH GRP CO LTD
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Problems solved by technology
[0007] In view of this, an embodiment of the present invention provides a method for preparing a low-temperature polysilicon thin film, a thin film transistor, and a display device, which are used to solve the problem of poor uniformity of the polysilicon thin film prepared by using the existing ELA technology
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preparation example Construction
[0038] A method for preparing a low-temperature polysilicon thin film provided in an embodiment of the present invention, such as figure 1 As shown, specifically, the following steps may be included:
[0039] S101, forming an amorphous silicon thin film on a base substrate;
[0040] S102, forming a pattern of a silicon oxide film covering the amorphous silicon film, wherein the thickness of the silicon oxide film in the predetermined area is greater than the thickness of the silicon oxide film in other areas except the predetermined area;
[0041] S103. Using an excimer laser to irradiate the silicon oxide film to make the amorphous silicon film form an initial polysilicon film, wherein the initial polysilicon film located in a predetermined area is a target low-temperature polysilicon film.
[0042]In the method for preparing the above-mentioned low-temperature polysilicon film provided by the embodiment of the present invention, since the amorphous silicon film is covered w...
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Abstract
The invention discloses a method for preparing a low-temperature polysilicon film, a thin film transistor and a display device. Since the amorphous silicon film is covered with a silicon oxide film, and the silicon oxide film is used as an insulating layer, the temperature of the amorphous silicon film can be maintained. It is beneficial to the crystallization of amorphous silicon. Since the preset region is the region where a low-temperature polysilicon film is to be formed, the thickness of the silicon oxide film in the preset region is thicker, so as to better maintain the temperature of the amorphous film in the preset region during the crystallization process, thereby ensuring The grain size of the polysilicon formed in the predetermined area is larger; and, the thickness of the silicon oxide film in other areas except the predetermined area is thinner, which can avoid the temperature of the amorphous silicon film in other areas from sharply increasing. Decrease, resulting in an unstable crystallization environment at the boundary of the predetermined region, thereby affecting the uniformity of the grain size of the polysilicon formed at the boundary of the predetermined region.
Description
technical field [0001] The invention relates to the technical field of polysilicon, in particular to a method for preparing a low-temperature polysilicon thin film, a thin film transistor and a display device. Background technique [0002] In pixel units of various display devices, a thin film transistor (Thin Film Transistor, TFT) that drives the display device by applying a driving voltage is widely used. Amorphous silicon (a-Si) materials with better stability and processability have been used in the active layer of TFTs, but the carrier mobility of a-Si materials is low, which cannot meet the needs of large-scale, high-resolution display devices. requirements, especially cannot meet the requirements of the next generation Active Matrix Organic Light Emitting Device (AMOLED). Compared with amorphous silicon (a-Si) thin film transistors, polysilicon, especially low-temperature polysilicon thin film transistors have higher electron mobility, better liquid crystal character...
Claims
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IPC IPC(8): H01L21/02H01L21/20H01L29/786
CPCH01L21/02686H01L27/1285H01L27/1288H01L27/1281H01L21/02532H01L27/1274H01L29/66757H01L29/78675H01L29/786H01L21/02057H01L21/02592H01L21/02675H01L21/3085H01L21/3086H01L27/1222
Inventor 牛亚男刘超贺增胜陈蕾张玉军
Owner BOE TECH GRP CO LTD