AlGaN/GaN HEMT device with vertical structure and method for manufacturing device

Abstract

The invention discloses an AlGaN / GaN HEMT device with a vertical structure. The device comprises a substrate, an n+GaN layer, a high-resistance GaN layer, an intrinsic GaN layer and an AlGaN layer sequentially formed on the substrate, drain electrodes in Ohm contact with the n+GaN layer, source electrodes in Ohm contact with the AlGaN layer, and gate electrodes, wherein the high-resistance GaN layer is used as a current-blocking layer and includes current conducting through holes formed by injecting Si ions; the current conducting through holes up and down pass through the high-resistance GaN layer. The invention further discloses a method for manufacturing the AlGaN / GaN HEMT device. The vertical structure can be formed on the sapphire or Si substrate with the relatively low price, and the AlGaN / GaN HEMT device is good in current resistance and current transmission, high in voltage-withstanding performance and low in electric leakage.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a vertical structure AlGaN / GaN HEMT device and a method for conducting a channel for current transmission. Background technique [0002] In 1993, Khan et al. produced the first GaN-based metal-semiconductor field-effect transistor (MESFET) AlGaN / GaN high electron mobility transistor (HEMT), see Appl.Phys.Lett, 1993, Vol.63(9): 1214- 1215. Although the performance, energy consumption, and figure of merit of the horizontal structure AlGaN / GaN are better than Si devices, there are still some problems that restrict the commercialization of GaN devices, such as AlGaN / GaN HFET under large gate bias or high frequency conditions There will be a current collapse effect, the "self-heating effect" that will occur when the AlGaN / GaN HFET works in a high-temperature, high-power environment, which will reduce the microwave power characteristics of the device, and the problem that it is not easy to be...

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Problems solved by technology

[0007] However, regardless of the use of Mg ion implantation or doping, on the one hand, it will introduce lattice damage, especially for the current blocking layer, resulting in a large leakage. On the other hand, Mg has a strong memory effect, which has a great impact on the secondary epitaxy Diffusion

The leakage and current collapse effects caused by the lattice damage caused by Al ion implantation are particularly serious. The reason for this current collapse is mainly due to the defects introduced by Al implantation, and the lattice damage caused by Al implantation must be performed at a very high temperature. It can only be repaired, and the temperature is about 1350°C. It is more complicated and relatively expensive for industrial use. At the same time, the lattice damage caused by large-scale ion implantation has an impact on the crystal quality of the secondary epitaxy.

These problems have always been the bottleneck restricting the development of vertical structure HEMT devices

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