34results about How to "Concentration effect" patented technology

The invention relates to a centrifugal tube structure for extracting DNA (deoxyribonucleic acid) by adopting a silicon bead method, belonging to the technical field of instruments for separating and purifying nucleic acid DNA or RNA (Ribonucleic Acid). The centrifugal tube structure comprises a centrifugal tube with a centrifugal tube cavity, an inner sleeve, and an impurity filtering mechanism, wherein a connecting band is arranged at the upper part of the centrifugal tube, and a plug cover is arranged at the tail end of the connecting band; the inner sleeve is arranged in the centrifugal tube cavity of the centrifugal tube, and a center hole is arranged at the center of the bottom wall of the inner sleeve; the impurity filtering mechanism is matched with the lower part of the inner sleeve and arranged in the centrifugal tube cavity along with the inner sleeve, and the plug cover is matched with an inner sleeve orifice of the inner sleeve. The centrifugal tube structure has the advantages that the loss of water-soluble DNA templates can be avoided; the impurity removal effect is desirable so as to favorably ensure the amplication of the PCR; the advantages of being convenient, fast and effort-saving to operate can be fully shown; and not only can the influence of TES and SLS on the concentration of adsorption liquid be prevented, the adsorption capability of silicon beads to the DNA can be ensured, but also original DNA templates can be retained so as to obviously improve the detection rate of low-copy biological detection materials.

The invention relates to the technical field of environmental governance accessory devices, in particular to an efficient stirring device for environmental governance. The efficient stirring device is simple in structure, reduces vortexes generated in the stirring process, can scrape off solids or other impurities on the inner wall of a stirring kettle, reduces the influence on the concentration of a governance liquid in the stirring process, improves the stirring speed, and improves the practicability. The efficient stirring device comprises a stirring kettle, wherein the stirring kettle is hollow, the top of the stirring kettle is communicated with an opening, a driving box is arranged at the opening of the stirring kettle and comprises a first ring body and a second ring body which are fixedly connected, a gear ring is fixedly connected to the interior of the first ring body, four planetary gears are meshed with the inner wall of the gear ring and are arranged in a circumferential array, the four planetary gears are meshed with a sun gear, the inner ring of the sun gear is fixedly connected with a driving shaft, the top end of the driving shaft is provided with a driving motor, the driving shaft is provided with a first bearing, the outer ring of the first bearing is fixedly connected with a base, and the four corners of the base are each provided with a second bearing.

The invention discloses a self-testing system of negative pressure loop of optical catalyzed reaction, which comprises the following parts: reacting part with magnetic stirrer, reactor, xenon lamp source, circulating part with magnetic glass piston pump, spherical glass condenser, gas-phased chromatogram, reactor, blowing vacuum extracting part with ten-shaped four-way vacuum piston, scrubbing bottle, precise vacuum pressure list and vacuum pump, sampling detecting part with gas phased chromatogram, automatic six-way sampling valve, gas-carrier bottle and gas driving bottle, temperature control part with thermostatic circulating pump, reactor temperature control jacket and spherical glass condenser. The invention can estimate the catalytic property of catalyst precisely and in time, whichis fit for other optical catalyzed reacting tests in relative to gas participation or generation.

The invention discloses a method for measuring narcotics and narcotics. A DGT device is used to measure narcotics and narcotics in water, and an MCX resin adsorption film is prepared by using MCX resin with a particle diameter of 30-40 μm and an agarose film. The membrane is applied to the technology based on the gradient diffusion thin film (DGT), and a suitable diffusion membrane and filter membrane are selected; after the adsorption is completed, a suitable eluent is selected to eliminate the measurement error of the seminal drugs to the greatest extent; the raw materials of the present invention are cheap It is easy to obtain, the preparation process is simple and time-consuming, and it is suitable for the in-situ detection of narcotics in water.

The invention discloses a method and system for analyzing the cause of marine algae and predicting its concentration based on machine learning. The method includes the following steps: constructing a data set, performing standardized processing on it, and dividing the processed data set into a training set and a test set set; feature selection is performed on the environmental parameters in the training set to obtain a variety of feature subsets, and all feature subsets are verified multiple times on a variety of different machine learning algorithms to obtain the optimal feature subset corresponding to each machine learning algorithm and its evaluation index; select the machine learning algorithm with the best evaluation index as the optimal prediction model; use the optimal prediction model to predict the algae concentration corresponding to the optimal feature subset; use the GBDT model to train the environmental parameter data in the data set, and obtain the optimal The importance of each environmental parameter in the optimal feature subset is used to analyze the cause of algal formation.

The invention provides a preparation method of a high specific surface area porous carbon doped iridium (HAPC / Ir) catalyst for water electrolysis for generating hydrogen, and belongs to the technicalfields of chemical power supply and new materials. According to the preparation method, MOF-5 is taken as the template, and the prepared material is applied to electrode materials. Through an impregnation method, iridium ions are merged to an organic frame made of MOF-5 through impregnation to obtain a precursor, and finally the precursor is made into the high specific surface area porous carbon doped iridium (HAPC / Ir) catalyst. The method and operation are simple, the equipment requirements are low, and high specific surface area porous carbon materials can be prepared massively. The technical process has the characteristics that the corrosion resistant performance of a positive electrode catalyst for water hydrolysis is enhanced in acidic electrolyte, and moreover, the stability of the catalyst is improved. Furthermore, the raw material (HAPC / Ir) is mild, nontoxic and safe, the resources of part materials are wide, and the industrial prospect is good.

The invention discloses a vertical-structure AlGaN / GaN HEMT device. The device comprises a substrate, an epitaxial structure and source, drain and grid electrodes. The epitaxial structure comprises a current blocking layer, a second semiconductor layer, a first semiconductor layer and a passivation layer which are formed in the front of the substrate successively. Two-dimensional electron gas channels are distributed in the first semiconductor layer and / or the second semiconductor layer. The source electrode is electrically connected with the first semiconductor layer, the grid electrode is arranged on the passivation layer, the drain electrode is arranged on the back of the substrate, a high-resistance GaN layer is used on the current blocking layer, and n-type heavy doped current conduction through holes formed by injection of Si ions are distributed in the area of the high-resistance GaN layer below the grid electrode. The device has the advantages of being high in voltage resistance, low in electric leakage and the like. The invention further discloses a manufacturing method of the HEMT device.

The invention discloses a vertical structure AlGaN / GaN HEMT device, comprising a substrate, and an n+GaN layer, a high-resistance GaN layer, an intrinsic GaN layer and an AlGaN layer sequentially formed on the substrate, and the n The GaN layer forms a drain electrode in ohmic contact, a source electrode in ohmic contact with the AlGaN layer, and a gate electrode; the high-resistance GaN layer is used as a current blocking layer, which includes a current conduction formed by Si ion implantation holes, and the current conduction via holes penetrate the high-resistance GaN layer up and down. The invention also discloses a manufacturing method of the vertical structure AlGaN / GaN HEMT device. The present invention can realize the vertical structure on relatively low-cost sapphire (sapphire) or Si substrate, and also has the advantages of good current blocking, current transmission, high withstand voltage, low leakage and the like.