Method for preparing GaN-based light emitting diode chip

Abstract

The invention discloses a method for preparing a GaN-based light emitting diode chip. The method comprises the following steps: (1) growing a transparent conductive film on the surface of a P-type GaN layer; (2) manufacturing a conductive layer pattern of the transparent conductive film on the surface of the transparent conductive film; (3) pre-baking, removing moisture and a solvent on the surface of a GaN-based epitaxial wafer, and manufacturing a p-type GaN platform surface structure photoresist pattern; (4) etching a platform surface structure according to the pattern of the platform surface structure, and manufacturing a platform surface on an n-type GaN layer; (5) respectively preparing a p-type electrode and an n-type electrode on the platform surfaces of the transparent conductive film and the n-type GaN layer to obtain the GaN-based light emitting diode chip; (6) manufacturing a passivation layer on the surface of the GaN-based light emitting diode chip. By adopting the method, a step of removing photoresist after corrosion in an ordinary process is omitted, the process is simplified, the production period is shortened, the working efficiency is improved, and meanwhile the consumption of raw materials is reduced.

Description

technical field [0001] The invention relates to a method for preparing a GaN-based light-emitting diode chip, which belongs to the field of optoelectronic technology. Background technique [0002] The photolithography process is to transfer the pattern on the mask plate to the wafer, so that the wafer has the photoresist pattern of the device you want to make. In order to transfer the pattern structure of the device to the wafer, it is necessary to perform photolithography The wafer is subjected to micro-patterning. The processing method usually adopts wet etching and dry etching. Wet etching is to remove the part of the film deposited before photolithography that is not covered and protected by photoresist with a chemical solution, so as to complete the purpose of transferring the mask pattern to the film. The dry etching method is ICP (Inductive Coupled Plasma, inductively coupled plasma) etching. During the ICP etching process, under the action of a high-frequency radi...

AI Technical Summary

Problems solved by technology

[0004] Aiming at the problems of long time and many steps in the existing GaN-based light-emitting diode chip preparation technology, the present invention proposes a method for preparing GaN-based light-emitting diode chips that simplifies the process, improves work efficiency, and reduces raw material consumption

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