Device for treating an object with plasma
A plasma and plasma source technology, applied in the field of plasma surface treatment, can solve the problems of low density, low uniformity and lack of selectivity of chemically active substances, and achieve the effect of high sensitivity and high etching speed
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[0107] product
[0108] A silicon semiconductor substrate (wafer) covered with silicon nitride (Si 3 N 4 ) layer and covered with silicon oxide SiO as a material not to be etched 2 layers, or composite areas covered with the aforementioned materials;
[0109] Silicon semiconductor base (substrate) (wafer), covered with silicon oxide SiO 2(material not to be etched) layer covered with Si 3 N 4 layer of (target material to be etched);
[0110] • A silicon semiconductor base (substrate) (wafer) comprising a composite region of the aforementioned stack.
[0111] Experiment: Measuring Selectivity
[0112] Selectivity was measured by taking the ratio of the thickness removed from material A compared to the thickness removed from material B after treatment for the same treatment time. This can also be expressed in the form of the ratio of the etch or strip rates of the two materials.
Embodiment 1
[0137] Using the plasma etching method according to one embodiment of the present invention to etch, for example, the previously described capped with silicon oxide and / or capped with silicon nitride (Si 3 N 4 / SiO 2 ) of the silicon substrate, consisting of repeating the two following basic steps until the desired result is obtained:
[0138] ● passivation step : It is used to prevent (or "passivate") some surfaces from chemical attack that occurs during the etching step. Passivation involves, depositing on the substrate such as C x f y h z (for example, CF 4 , or C 4 f 8 or C 2 f 6 、CHF 3 、CH 3 F etc.) type polymers,
[0139] ● Removal or etching step : It is used to partially or completely remove ("etch") material. During step 2, the passivation layer may be partially or completely removed,
[0140] The duration of each step is at the level of a few seconds, if not tens of seconds, but also very short, at the level of 0.1s.
[0141] The method is carried ...
Embodiment 2
[0175] Selectively etch silicon nitride Si from a substrate comprising silicon capped with silicon oxide and / or silicon nitride 3 N 4 layer, which is used as a mask for the fabrication of so-called composite STI (Shallow Trench Isolation) structures.
[0176] To this end, the sequence of steps of carrying out the passivation and removal of condition 1 of Example 1 was repeated eight times, with periods of 7 and 15 seconds, respectively. Figure 15A (left) shows the composite structure before removal, while in Figure 15B The composite structure after processing is shown in (right). silicon nitride Si 3 N 4 is denoted as 151 and silicon oxide is denoted as 153. Note that the silicon nitride is suppressed, but the silicon oxide is intact.
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